2025-12-14 10.2.82.121
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Code of China
Chinese National Standard List: Semiconductor rectifier devices

GB 4940-1985 Triode thyristors for general purpose 
  Issued on:   Translation Price(USD): 210.0
SJ/Z 21540-2018 Guide for statistical process control technique implementation of high-speed cable assembly 
  Issued on:   Translation Price(USD): 2000.0
GB 9436-1988 Letter symbols of parameter for liquid crystal display dcvices 
  Issued on: 1988-06-23   Translation Price(USD): 60.0
GB 6351-1986 Blank detail specification for rectifier diodes(including avalanche recti-fier diodes),ambient and case-rated,up to 100A 
  Issued on:   Translation Price(USD): 150.0
JB/T 56229-1994 KP Series General Large-current Thyristor 
  Issued on:   Translation Price(USD):
JB/T 56226-1994 ZP Series General Intermediate-current Rectifier Diodes 
  Issued on:   Translation Price(USD):
GB 9514-1988 Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD 203 
  Issued on:   Translation Price(USD): 130.0
QJ 2661-1994 Screening Technical Conditions for Silicon-Bridge Rectifier 
  Issued on: 1994-04-25   Translation Price(USD): 135.0
GB 9498-1988 Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ34Q 
  Issued on:   Translation Price(USD): 300.0
GB/T 6590-1998 Semiconductor devices -Discrete devices -Part 6:Thyristors- Section Two-Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated,up to 100A 
  Issued on: 1998-1-1   Translation Price(USD): 180.0
GB/T 11595-1989 Interface between data terminal equipment (DTE) and data circuit-terminating equipment (DCE) for terminals operating in the packet mode and connected to public data networks by dedicated circuit 
  Issued on: 1989-08-01   Translation Price(USD):
GB 8558-1987 Silicon switching rectifier diode for type 2CN31D 
  Issued on:   Translation Price(USD): 180.0
GB 9495-1988 Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ322 
  Issued on:   Translation Price(USD): 410.0
GB 4023-1986 Semiconductor discrete devices--Part 2: Rectifier diodes 
  Issued on:   Translation Price(USD): 640.0
GB 9503-1988 Detail specification for electronic components--Reverse blocking triode thyristorcase-rated for type 3CT320 
  Issued on:   Translation Price(USD): 180.0
GB/T 6352-1998 Semiconductor devices Discrete devices Part 6:Thyristors-Section One--Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A 
  Issued on: 1998-1-1   Translation Price(USD): 180.0
TB 1342-1985  
  Issued on:   Translation Price(USD): 264.0
GB 9497-1988 Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ323 
  Issued on:   Translation Price(USD): 300.0
GB 6590-1986 Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated,up to 100A (Applicable for certification) 
  Issued on:   Translation Price(USD): 150.0
GB 6352-1986 Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A (Applicable for certification) 
  Issued on:   Translation Price(USD): 195.0
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