2025-12-13 10.2.82.121
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
SJ 3177-1988 Direct heated step-function positive temperature coefficient demagnetizing thermistors for Type MZ72 Assessment level E 410.0 via email in 1~3 business day abolished2010-01-20 ,,1988-10-1
SJ 2214.6-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors 184.0 via email in 1~3 business day superseded2015-10-01,2015-10-1,1983-7-1
SJ/T 2307.1-1997 Detail specification for electronic components - Surge suppression varistors - Type MYL1 zinc oxide varistors for use in lightning arrester - Assessment level E 300.0 via email in 1~3 business day superseded,2021-4-1,1998-1-1
YD/T 931-1997 Basic requirement of quality manual for communications equipment production enterprises - telecommunication software part 150.0 via email in 1~3 business day abolished2009-12-01 ,,1998-1-1
SJ 50033/76-1995 Semiconductor discrete devices - Detail specification for Type 3DG218 silicon microwave low-noise transistor 130.0 via email in 1~3 business day valid,,1995-12-1
SJ/T 10430-1993 Blank detail specification for the plenoresistive pressure transducer Assessment level E 120.0 via email in 1~3 business day valid,,1994-6-1
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes 184.0 via email in 1~3 business day superseded2015-10-01,2015-10-1,1983-7-1
SJ 50033/70-1995 Semiconductor discrete device - Detail specification for Type PIN35 series for PIN diode 100.0 via email in 1~3 business day valid,,1995-12-1
SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors 184.0 via email in 1~3 business day superseded2015-10-01,2015-10-1,1983-7-1
SJ 2309.1-1983 Suppressed noise zinc oxide varistors for Type MYZ1 180.0 via email in 1~3 business day abolished2010-01-20 ,,1983-10-1
SJ/T 10431-1993 Humidity generators and humidity testing methods for the humidity sensors 390.0 via email in 1~3 business day valid,,1994-6-1
SJ 50033.52-1994 Semiconductor discrete device-Detail specification for type CS0529 GaAs microwave power field effect transistor 180.0 via email in 1~3 business day valid,,1994-12-1
SJ 50033/92-1995 Semiconductor discrete devices-Detail specification for Type 3CD100 low-frequency and high-power transistor 180.0 via email in 1~3 business day valid,,1995-12-1
YD/T 1800-2008 Framework of Information Security Operation Center 210.0 via email in 1~3 business day valid,,2008-6-1
YD/T 638.5-1993 Type Designation System for Telephone Switchboards 104.0 via email in 1~3 business day valid,,1993-2-1
SJ 50033/95-1995 Semiconductor discrete devices-Detail specification for Type 3DG144 NPN silicon high-frequency low-noise low-power transistor 180.0 via email in 1~3 business day valid,,1996-10-1
SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes 184.0 via email in 1~3 business day superseded2015-10-01,2015-10-1,1983-7-1
SJ 2215.12-1982 Method of measurement for input-to-output capacitance of semiconductor photocouplers 184.0 via email in 1~3 business day superseded,2015-10-1,1983-7-1
SJ 50033/85-1995 Semiconductor discrete devices - Detail specification for Type CS141 silicon N-channel MOS deplition mode field-effect transistor 150.0 via email in 1~3 business day valid,,1995-12-1
SJ 2215.8-1982 Method of measurement for output saturation voltage of semiconductor photocouplers (diodes) 184.0 via email in 1~3 business day superseded,2015-10-1,1983-7-1
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SJ 3177-1988 Direct heated step-function positive temperature coefficient demagnetizing thermistors for Type MZ72 Assessment level E 
  Issued on: 1988-04-08   Price(USD): 410.0
SJ 2214.6-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors 
  Issued on: 1982-11-30   Price(USD): 184.0
SJ/T 2307.1-1997 Detail specification for electronic components - Surge suppression varistors - Type MYL1 zinc oxide varistors for use in lightning arrester - Assessment level E 
  Issued on: 1997-9-3   Price(USD): 300.0
YD/T 931-1997 Basic requirement of quality manual for communications equipment production enterprises - telecommunication software part 
  Issued on: 1997-12-02   Price(USD): 150.0
SJ 50033/76-1995 Semiconductor discrete devices - Detail specification for Type 3DG218 silicon microwave low-noise transistor 
  Issued on: 1995-5-25   Price(USD): 130.0
SJ/T 10430-1993 Blank detail specification for the plenoresistive pressure transducer Assessment level E 
  Issued on: 1993-12-17   Price(USD): 120.0
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes 
  Issued on: 1982-11-30   Price(USD): 184.0
SJ 50033/70-1995 Semiconductor discrete device - Detail specification for Type PIN35 series for PIN diode 
  Issued on: 1995-5-25   Price(USD): 100.0
SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors 
  Issued on: 1982-11-30   Price(USD): 184.0
SJ 2309.1-1983 Suppressed noise zinc oxide varistors for Type MYZ1 
  Issued on: 1983-02-24   Price(USD): 180.0
SJ/T 10431-1993 Humidity generators and humidity testing methods for the humidity sensors 
  Issued on: 1993-12-14   Price(USD): 390.0
SJ 50033.52-1994 Semiconductor discrete device-Detail specification for type CS0529 GaAs microwave power field effect transistor 
  Issued on: 1994-09-30   Price(USD): 180.0
SJ 50033/92-1995 Semiconductor discrete devices-Detail specification for Type 3CD100 low-frequency and high-power transistor 
  Issued on: 1995-05-25   Price(USD): 180.0
YD/T 1800-2008 Framework of Information Security Operation Center 
  Issued on: 2008-1-1   Price(USD): 210.0
YD/T 638.5-1993 Type Designation System for Telephone Switchboards 
  Issued on: 1993-8-17   Price(USD): 104.0
SJ 50033/95-1995 Semiconductor discrete devices-Detail specification for Type 3DG144 NPN silicon high-frequency low-noise low-power transistor 
  Issued on: 1996-06-14   Price(USD): 180.0
SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes 
  Issued on: 1982-11-30   Price(USD): 184.0
SJ 2215.12-1982 Method of measurement for input-to-output capacitance of semiconductor photocouplers 
  Issued on: 1982-11-30   Price(USD): 184.0
SJ 50033/85-1995 Semiconductor discrete devices - Detail specification for Type CS141 silicon N-channel MOS deplition mode field-effect transistor 
  Issued on: 1995-5-25   Price(USD): 150.0
SJ 2215.8-1982 Method of measurement for output saturation voltage of semiconductor photocouplers (diodes) 
  Issued on: 1982-11-30   Price(USD): 184.0
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