| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add to Cart |
| GB/T 14139-1993 |
Silicon epitaxial wafers |
260.0 |
via email in 1~3 business day |
abolished2010-06-01 ,2010-6-1,1993-10-1 |
|
| YS/T 224-1994 |
Thallium |
30.0 |
via email in 1~3 business day |
superseded,2017-1-1,1993-3-1 |
|
| YS/T 43-1992 |
High-purity arsenic |
184.0 |
via email in 1~3 business day |
superseded,2012-7-1,1993-3-1 |
|
| YS/T 222-1996 |
Tellurium ingots |
105.0 |
via email in 1~3 business day |
superseded,2011-3-1,1993-3-1 |
|
| YS/T 28-1992 |
Silicon wafer packaging |
184.0 |
via email in 1~3 business day |
superseded,2015-10-1,1993-1-1 |
|
| YS/T 26-1992 |
Test method for silicon wafer edge |
60.0 |
via email in 1~3 business day |
superseded,2017-1-1,1993-1-1 |
|
| GB/T 11094-1989 |
Boat-grown gallium arsenide single crystals and As-cut slices |
120.0 |
via email in 1~3 business day |
abolished2008-02-01,2008-2-1,1990-3-1 |
|
| GB 11093-1989 |
Liquid encapaulated czochralski-grouwn gallium arsenide single crystals and As-cut slices |
90.0 |
via email in 1~3 business day |
abolished2008-02-01,2008-2-1,1990-3-1 |
|
| GB/T 11070-1989 |
Reduced germanium ingot |
184.0 |
via email in 1~3 business day |
superseded2006-11-01,2006-11-1,1990-2-1 |
|
| GB/T 11071-1989 |
Zone-refined germanium ingot |
224.0 |
via email in 1~3 business day |
superseded2006-11-01,2006-11-1,1990-2-1 |
|
| GB/T 11072-1989 |
Indium antimonide polycrystal, single crystals and as-cut slices |
120.0 |
via email in 1~3 business day |
superseded2010-06-01,2010-6-1,1990-2-1 |
|
| GB 3495-1983 |
Arsenic |
184.0 |
via email in 1~3 business day |
superseded,1994-4-1,1983-12-1 |
|
| SJ 1551-1979 |
Method of measurement for resistivity of silicon epitaxial layer (capacitance-voltage method) (Provisional) |
184.0 |
via email in 1~3 business day |
abolished2010-02-01 ,,1980-6-1 |
|
| GB 1477-1979 |
Selenium |
184.0 |
via email in 1~3 business day |
superseded,1996-12-1,1979-10-1 |
|
|
|
