GB/T 33657-2017 English Version, GB/T 33657-2017 Nanotechnologies―Electrical operating parameter test specification of wafer level nano-scale phase change memory cells (English Version)

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GB/T 33657-2017 Nanotechnologies―Electrical operating parameter test specification of wafer level nano-scale phase change memory cells (English Version)
Standard No.:	GB/T 33657-2017	Status:	valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	7500 words	Translation Price(USD):	220.0 remind me the price change Email:
Implemented on:	2017-12-1	Delivery:	via email in 1~3 business day

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Standard No.:	GB/T 33657-2017
English Name:	Nanotechnologies―Electrical operating parameter test specification of wafer level nano-scale phase change memory cells
Chinese Name:	纳米技术晶圆级纳米尺度相变存储单元电学操作参数测试规范
Chinese Classification:	L56 Semiconductor integrated circuit
Professional Classification:	GB National Standard
Source Content Issued by:	MOHURD; AQSIQ
Issued on:	2017-05-12
Implemented on:	2017-12-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	7500 words
Translation Price(USD):	220.0
Delivery:	via email in 1~3 business day

Standard

GB/T 33657-2017 Nanotechnologies―Electrical operating parameter test specification of wafer level nano-scale phase change memory cells (English Version)
Standard No.	GB/T 33657-2017
Status	valid
Language	English
File Format	PDF
Word Count	7500 words
Price(USD)	220.0
Implemented on	2017-12-1
Delivery	via email in 1~3 business day

Detail of GB/T 33657-2017

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Introduction of GB/T 33657-2017

本标准规定了纳米尺度相变存储单元读写擦参数的晶圆测试规范，其测试结果可用于表征相变存储材料或器件的电学可操作性能。?本标准适用于以硫系化合物为主要原料，基于半导体晶圆工艺加工制造的电极尺度小于100 nm的相变存储单元，100 nm～300 nm的相变存储单元也可参照本标准执行。?本标准不适用于包含外围驱动电路的存储单元。?

Contents of GB/T 33657-2017

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