Standard No.:	GB/T 40109-2021
English Name:	Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
Chinese Name:	表面化学分析 二次离子质谱 硅中硼深度剖析方法
Chinese Classification:	G04    Basic standards and general methods
Professional Classification:	GB    National Standard
ICS Classification:	71.040.40 71.040.40    Chemical analysis 71.040.40
Source Content Issued by:	SAMR; SAC
Issued on:	2021-05-21
Implemented on:	2021-12-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	6500 words
Translation Price(USD):	250.0
Delivery:	via email in 1~3 business day

本文件描述了用扇形磁场或四极杆式二次离子质谱仪对硅中硼进行深度剖析的方法，以及用触针式表面轮廓仪或光学干涉仪深度定标的方法。
本文件适用于硼原子浓度范围1×1016 atoms/cm3～1×1020 atoms/cm3的单晶硅、多晶硅或非晶硅样品，溅射弧坑深度在50 nm及以上。