SJ 20173-1992 English Version, SJ 20173-1992 Semiconductor discrete device-Detail specification for NPN silicon low-power switching transistor of Types 3DK2218,3DK2218A, 3DK2219 and 3DK2219A (English Version)

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SJ 20173-1992 Semiconductor discrete device-Detail specification for NPN silicon low-power switching transistor of Types 3DK2218,3DK2218A, 3DK2219 and 3DK2219A (English Version)
Standard No.:	SJ 20173-1992	Status:	valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	7000 words	Translation Price(USD):	210.0 remind me the price change Email:
Implemented on:	1993-5-1	Delivery:	via email in 1~3 business day

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Standard No.:	SJ 20173-1992
English Name:	Semiconductor discrete device-Detail specification for NPN silicon low-power switching transistor of Types 3DK2218,3DK2218A, 3DK2219 and 3DK2219A
Chinese Name:	半导体分立器件３ＤＫ２２１８（２２１８Ａ、２２１９、２２１９Ａ）型ＮＰＮ硅小功率开关晶体管详细规范
Chinese Classification:	D01 Technical management
Professional Classification:	SJ Professional Standard - Electronics
Source Content Issued by:	China Electronics Industry Corporation
Issued on:	1992-11-19
Implemented on:	1993-5-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	7000 words
Translation Price(USD):	210.0
Delivery:	via email in 1~3 business day

Standard

SJ 20173-1992 Semiconductor discrete device-Detail specification for NPN silicon low-power switching transistor of Types 3DK2218,3DK2218A, 3DK2219 and 3DK2219A (English Version)
Standard No.	SJ 20173-1992
Status	valid
Language	English
File Format	PDF
Word Count	7000 words
Price(USD)	210.0
Implemented on	1993-5-1
Delivery	via email in 1~3 business day

Detail of SJ 20173-1992

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Introduction of SJ 20173-1992

本规范规定了3DK2218、3DK2218A、3DK2219和3DK2219A型NPN硅小功率开关晶体管（以下简称器件）的详细要求。每种器件按GJB33《半导体分立器件规范》的规定，提供产品保证的三个等级（GP、GT和GCT级）。

Contents of SJ 20173-1992

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