SJ 20176-1992 English Version, SJ 20176-1992 Semiconductor discrete device - Detail specification for NPN silicon low-power high-reverse-voltage transistor of Types 3DG3439 and 3DG3440 (English Version)

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SJ 20176-1992 Semiconductor discrete device - Detail specification for NPN silicon low-power high-reverse-voltage transistor of Types 3DG3439 and 3DG3440 (English Version)
Standard No.:	SJ 20176-1992	Status:	valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	5000 words	Translation Price(USD):	150.0 remind me the price change Email:
Implemented on:	1993-5-1	Delivery:	via email in 1~3 business day

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Standard No.:	SJ 20176-1992
English Name:	Semiconductor discrete device - Detail specification for NPN silicon low-power high-reverse-voltage transistor of Types 3DG3439 and 3DG3440
Chinese Name:	半导体分立器件 3DG3439型和3DG3440型NPN硅小功率高反压晶体管详细规范
Chinese Classification:	D01 Technical management
Professional Classification:	SJ Professional Standard - Electronics
Source Content Issued by:	CEIC
Issued on:	1992-11-19
Implemented on:	1993-5-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	5000 words
Translation Price(USD):	150.0
Delivery:	via email in 1~3 business day

Standard

SJ 20176-1992 Semiconductor discrete device - Detail specification for NPN silicon low-power high-reverse-voltage transistor of Types 3DG3439 and 3DG3440 (English Version)
Standard No.	SJ 20176-1992
Status	valid
Language	English
File Format	PDF
Word Count	5000 words
Price(USD)	150.0
Implemented on	1993-5-1
Delivery	via email in 1~3 business day

Detail of SJ 20176-1992

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Introduction of SJ 20176-1992

本规范规定了3DG3439型和3DG3440型NPN硅小功率高反压晶体管(以下简称器件)的详细要求。该种器件按GJB33《半导体分立器件总规范》的规定，提供产品保证的三个等级(GP、GT和GCT级)。

Contents of SJ 20176-1992

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