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| Position: Chinese Standard in English/SJ/T 9014.8.2-2018 |
| SJ/T 9014.8.2-2018 Semiconductor devices-Discrete devices Part 8-2:Blank detail specification for super junction metal-oxide-semiconductor field-effect transistors (English Version) | |||
| Standard No.: | SJ/T 9014.8.2-2018 | Status: | valid remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 11500 words | Translation Price(USD): | 340.0 remind me the price change |
| Implemented on: | 2018-7-1 | Delivery: | via email in 1~5 business day |
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| Standard No.: | SJ/T 9014.8.2-2018 |
| English Name: | Semiconductor devices-Discrete devices Part 8-2:Blank detail specification for super junction metal-oxide-semiconductor field-effect transistors |
| Chinese Name: | 半导体器件 分立器件 第8-2部分:超结金属氧化物半导体场效应晶体管空白详细规范 |
| Professional Classification: | SJ Professional Standard - Electronics |
| Source Content Issued by: | Ministry of Industry and Information Technology |
| Issued on: | 2018-04-30 |
| Implemented on: | 2018-7-1 |
| Status: | valid |
| Target Language: | English |
| File Format: | |
| Word Count: | 11500 words |
| Translation Price(USD): | 340.0 |
| Delivery: | via email in 1~5 business day |