2025-12-15 216.73.216.89
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Code of China
Chinese National Standard List: Semiconductor diode

GB/T 16515-2023 Potentiometers for use in electronic equipment—Part 5: Sectional specification—Single-turn rotary low-power wirewound and non-wirewound potentiometers 
  Issued on: 2023-9-7   Translation Price(USD): 400.0
GB/T 21039.1-2007 Semiconductor devices—Discrete devices—Part 4-1:microwave diodes and transistors—Microwave field effect transistors—Blank detail specification 
  Issued on: 2007-6-29   Translation Price(USD): 180.0
SJ 20957-2006 General specification for large power semiconductor laser diode array 
  Issued on: 2006-8-7   Translation Price(USD): 300.0
GB/T 6589-2002 Semiconductor Devices—Discrete deveice—Part 3-2:Signal (including switching) and regulator diodes—Blank detail specification for voltage-regulator diodes and voltage-reference diodes (e 
  Issued on: 2002-12-4   Translation Price(USD): 180.0
SJ 50033/150-2002 Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2DW230~236 
  Issued on: 2002-10-30   Translation Price(USD): 120.0
SJ 50033/153-2002 Semiconductor discrete devices Detail specification for type 2CK141 microwave switch diode 
  Issued on: 2002-10-30   Translation Price(USD): 100.0
SJ 50033/161-2002 Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210~251 
  Issued on: 2002-10-30   Translation Price(USD): 120.0
SJ 50033/152-2002 Semiconductor discrete devices Detail specification for type 2CK140 microwave switch diode 
  Issued on: 2002-10-30   Translation Price(USD): 120.0
SJ 50033/151-2002 Semiconductor discrete device Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 
  Issued on: 2002-10-30   Translation Price(USD): 150.0
GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching)and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlle 
  Issued on: 2000-10-17   Translation Price(USD): 150.0
GB/T 4023-1997 Semiconductor devices Discrete devices and integrated circuits Part 2：Rectifier diodes 
  Issued on: 1997-10-7   Translation Price(USD): 570.0
GB/T 15177-1994 Blank detail specification for mircowave detectors and mixer diodes 
  Issued on: 1994-08-20   Translation Price(USD): 160.0
GB/T 15137-1994 Blank detail specification for Gunn diodes 
  Issued on: 1994-06-25   Translation Price(USD): 410.0
GB/T 15178-1994 Blank detail specification for variable capacitance diodes 
  Issued on: 1994-08-20   Translation Price(USD): 410.0
GB/T 14863-1993 test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes 
  Issued on: 1993-1-2   Translation Price(USD): 150.0
QJ 2362-1992 Screening Specification for Step Recovery Diodes  
  Issued on: 1992-03-05   Translation Price(USD): 75.0
GB/T 13066-1991 Blank detail specification for unijunction transistors 
  Issued on: 1991-07-06   Translation Price(USD): 190.0
GB/T 13063-1991 Blank detail specification for current-regulator and current-reference diodes 
  Issued on: 1991-07-06   Translation Price(USD): 190.0
GB/T 12562-1990 Blank detail specification for PIN diodes 
  Issued on: 1990-01-02   Translation Price(USD): 410.0
GB 9595-1988 Detail specification for electronic component--Semiconductor integrated circuit--cw574cs voltage stabilizer for electronic tuner 
  Issued on:   Translation Price(USD): 150.0
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