2025-12-14 216.73.216.3
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Code of China
Chinese National Standard List: Semiconductor triode

GB 9518-1988 Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD204 
  Issued on:   Translation Price(USD): 340.0
SJ 765-1974 Detail specification for silicon NPN eqitaxial planar low-frequency high power transistors, Type 3DD50 and 3DD51 
  Issued on: 1974-10-01   Translation Price(USD): 180.0
GB 9509-1988 Detail specification for electronic components--Ambient-rated transistor for type 3CG778 silicon PNP for high frequency amplification 
  Issued on:   Translation Price(USD): 160.0
SJ 50033/167-2004 Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor 
  Issued on: 2004-8-2   Translation Price(USD): 130.0
GB 7151-1987 Detail specification for electronic components--Ambient-rated bipolar transistors for high-frequency amplification type 3DG131A, 3DG131B, 3DG131C 
  Issued on:   Translation Price(USD): 160.0
SJ/T 11226-2000 Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor 
  Issued on: 2000-8-16   Translation Price(USD): 150.0
GB/T 6256-1986 Blank detail specification for industrial heating triodes 
  Issued on: 1986-04-01   Translation Price(USD): 260.0
GB 9520-1988 Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD207 
  Issued on:   Translation Price(USD): 180.0
GB 7147-1987 Detail specification for electronic components--Ambint-rated bipolar transistors for high frequency amplification type 3DG80 
  Issued on:   Translation Price(USD): 180.0
GB/T 4586-1994 Semiconductor devices－Discrete devices－Part 8: Field-effect transistors 
  Issued on: 1994-12-31   Translation Price(USD): 520.0
GB 9515-1988 Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD205A 
  Issued on:   Translation Price(USD): 130.0
SJ 775-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD65 and 3DD66 
  Issued on: 1974-10-01   Translation Price(USD): 180.0
GB 10271-1988 Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG162 
  Issued on:   Translation Price(USD): 410.0
GB 7577-1987 Blank detail specification for case-rated bipolar transistors for low-frequency amplification 
  Issued on:   Translation Price(USD): 180.0
SJ/T 11227-2000 Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 
  Issued on: 2000-8-16   Translation Price(USD): 160.0
GB 9500-1988 Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG107 
  Issued on: 1988-12-01   Translation Price(USD): 160.0
GB 6356-1986 Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CX201A, 3CX201B, 3CX201C 
  Issued on:   Translation Price(USD): 190.0
GB 9517-1988 Detail specification for electronic components high-frequency amplification transistor for silicon NPN ambient-rated for type 3DG3077 
  Issued on:   Translation Price(USD): 410.0
GB 9522-1988 Detail specification for electronic components--Ambie-nt-rated transistor for type 3DG1815 silicon NPN for high frequency amplification 
  Issued on:   Translation Price(USD): 190.0
SJ 1471-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG103 
  Issued on: 1979-09-11   Translation Price(USD): 180.0
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