| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add to Cart |
| GB/T 13389-2014 |
Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon |
$430.00 |
via email in 1~5 business day |
valid,,2015-9-1 |
|
| GB/T 14139-2009 |
Silicon epitaxial wafers |
$180.00 |
via email in 1~3 business day |
abolished2020-05-01,2020-5-1,2010-6-1 |
|
| GB/T 14139-2019 |
Silicon epitaxial wafers |
$160.00 |
via email in 1~3 business day |
valid,,2020-5-1 |
|
| GB/T 14140-2009 |
Test method for measuring diameter of semiconductor wafer |
$180.00 |
via email in 1~3 business day |
valid,,2010-6-1 |
|
| GB/T 14141-2009 |
Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array |
$180.00 |
via email in 1~3 business day |
valid,,2010-6-1 |
|
| GB/T 14146-2009 |
Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method |
$160.00 |
via email in 1~3 business day |
superseded,2021-12-1,2010-6-1 |
|
| GB/T 14264-2009 |
Semiconductor materials - Terms and definitions |
$720.00 |
via email in 1~3 business day |
abolished2024-11-01,2024-11-1,2010-6-1 |
|
| GB/T 14264-2024 |
Terminology of semiconductor materials |
$1260.00 |
via email in 1~5 business day |
valid,,2024-11-1 |
|
| GB/T 14844-2018 |
Designations of semiconductor materials |
$160.00 |
via email in 1~3 business day |
valid,,2019-11-1 |
|
| GB/T 14847-2010 |
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance |
$180.00 |
via email in 1~3 business day |
valid,,2011-10-1 |
|
| GB/T 14863-2013 |
Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes |
$210.00 |
via email in 1~3 business day |
abolished2017-12-19,,2014-8-15 |
|
| GB/T 1551-2009 |
Test method for measuring resistivity of monocrystal silicon |
$360.00 |
via email in 1~3 business day |
superseded,2021-12-1,2010-6-1 |
|
| GB/T 1553-2009 |
Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay |
$210.00 |
via email in 1~3 business day |
superseded,2024-3-1,2010-6-1 |
|
| GB/T 1554-2009 |
Testing method for crystallographic perfection of silicon by preferential etch techniques |
$360.00 |
via email in 1~3 business day |
valid,,2010-6-1 |
|
| GB/T 1555-1997 |
Test methods for determining the orientation of a semiconductor single crystal |
$300.00 |
via email in 1~3 business day |
superseded,2010-6-1,1998-8-1 |
|
| GB/T 1555-2009 |
Testing methods for determining the orientation of a semiconductor single crystal |
$150.00 |
via email in 1~3 business day |
superseded,2024-3-1,2010-6-1 |
|
| GB/T 1558-1997 |
Test method for substitutional atomic carbon content of silicon by infrared absorption |
$300.00 |
via email in 1~3 business day |
superseded,2010-6-1,1998-8-1 |
|
| GB/T 1558-2009 |
Test method for substitutional atomic carbon concent of silicon by infrared absorption |
$150.00 |
immediately |
superseded,2024-7-1,2010-6-1 |
|
| GB/T 16595-1996 |
Specification for a universal wafer grid |
$234.00 |
via email in 1~3 business day |
superseded,2020-2-1,1997-4-1 |
|
| GB/T 16595-2019 |
Specification for a universal wafer grid |
$130.00 |
via email in 1~3 business day |
valid,,2020-2-1 |
|
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* Related standard quantity: * Page quantity: *
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