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Chinese Standard Classification
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| Position: Search | valid to be valid superseded to be superseded abolished to be abolished |
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GB 30530-2014 The Norm of Energy Consumption Per Unit Products of Dimethyl Cyclosiloxane
Issued on: 2014-4-28 Price(USD): 160.0 |
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SJ 2760-1987 Detail specification for plastic package high voltage silicon rectifier stacks,Type 2CZ70~77 and 2CL79
Issued on: 1987-02-10 Price(USD): 180.0 |
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SJ 1943-1981 Detail specification for high voltage silicon rectifier stacks, Type 2CL12~20 and 2DL12~20
Issued on: 1981-01-03 Price(USD): 180.0 |
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GB 32284-2015 Minimum allowable values of energy efficiency and energy efficiency grades for petrochemical centrifugal pumps
Issued on: 2015-12-10 Price(USD): 140.0 |
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GB 12021.2-2008 The maximum allowable values of the energy consumption and energy efficiency grade for household refrigerators
Issued on: 2008-10-8 Price(USD): 294.0 |
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SJ 2850-1988 General specification for base, cap and lead frame of discrete semiconductor devices
Issued on: 1988-02-25 Price(USD): 250.0 |
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GB 31826-2015 Norm of energy consumption per unit product of polypropylene
Issued on: 2015-06-30 Price(USD): 160.0 |
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SJ/T 10982-1996 Detailed specifications for electronic components -2CC25 and 2CC30 silicon band variable capacitance diodes (Applicable for certification)
Issued on: 1996-11-20 Price(USD): 380.0 |
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GB/T 29454-2012 Specification for equipping and managing of the measuring instrument of energy in the pulp and paper enterprise
Issued on: 2012-12-31 Price(USD): 140.0 |
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SJ 1986-1981 Detail specification for low frequency low noise field-effect transistors, Type CS13
Issued on: 1982-01-03 Price(USD): 180.0 |
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SJ/T 10053-1991 Detail specification for electronic components. Case rated bipolar transistor for silicon NPN low-frequency amplification for type 3DD 313
Issued on: 1991-04-08 Price(USD): 340.0 |
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SJ 2290-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151
Issued on: 1983-01-14 Price(USD): 180.0 |
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SJ 2722-1986 Detail specification for silicon high speed switching rectifier diodes, Type 2CZ306
Issued on: 1986-10-24 Price(USD): 380.0 |
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GB/T 15587-2008 Guideline for energy management in industry enterprise
Issued on: 2008-9-18 Price(USD): 120.0 |
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SJ 2106-1982 Detail specification for N channel junction field-effect low power switching transistors, Type CS49
Issued on: 1982-05-15 Price(USD): 180.0 |
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SJ 1642-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD164, 3DD165 and 3DD166
Issued on: 1980-11-27 Price(USD): 180.0 |
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GB/T 15910-2009 Monitoring and testing for energy saving of heat-transmission and distribution system
Issued on: 2009-10-30 Price(USD): 140.0 |
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SJ 2370-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD255, 3CD256 and 3CD455
Issued on: 1983-08-19 Price(USD): 180.0 |
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SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
Issued on: 1983-08-15 Price(USD): 184.0 |
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GB/T 32045-2015 Guidance on implementation of measurement and verification of energy savings
Issued on: 2015-09-11 Price(USD): 250.0 |
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