2025-12-13 216.73.216.3
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT) 750.0 via email in 1~3 business day valid,,2013-6-1
SJ 50033/176-2007 semiconductro discrete devices detail specification for type 3da523 silicon microwave pulse power transistor 120.0 via email in 1~3 business day valid,,2008-2-1
SJ 50033/172-2007 semiconductro discrete devices detail specification for type 3da519 silicon microwave pulse power transistor 150.0 via email in 1~3 business day valid,,2008-2-1
SJ 50033/170-2007 semiconductro discrete devices detail specification for type 3da516 silicon microwave pulse power transistor 150.0 via email in 1~3 business day valid,,2008-2-1
SJ 50033/169-2004 Semiconductor discrete devices Detail specification for type 3DA510 silicon microwave pulse power transistor 150.0 via email in 1~3 business day valid,,2004-12-1
SJ 50033/168-2004 Semiconductor discrete devices Detail specification for type 3DA509 silicon microwave pulse power transistor 150.0 via email in 1~3 business day valid,,2004-12-1
SJ 50033/166-2004 Semiconductor discrete devices Detail specification for type 3DA507 silicon microwave pulse power transistor 130.0 via email in 1~3 business day valid,,2004-12-1
SJ 50033/167-2004 Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor 130.0 via email in 1~3 business day valid,,2004-12-1
SJ 50033/163-2003 Semiconductor discrete device Detail specification of type 3DK457 for power switching transistors 150.0 via email in 1~3 business day valid,,2004-3-1
SJ/T 11225-2000 Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor 160.0 via email in 1~3 business day valid,,2000-10-1
SJ/T 11226-2000 Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor 150.0 via email in 1~3 business day valid,,2000-10-1
SJ/T 11227-2000 Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 160.0 via email in 1~3 business day valid,,2000-10-1
GB/T 7576-1998 devices -Discrete devices - Part 7: Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification 210.0 via email in 1~3 business day valid,,1999-6-1
GB/T 6219-1998 Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 210.0 via email in 1~3 business day valid,,1999-6-1
GB/T 6217-1998 Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification 210.0 via email in 1~3 business day valid,,1999-6-1
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications 180.0 via email in 1~3 business day valid,,1997-1-1
GB/T 7577-1996 detail specification for case-rated bipolar transistors for low-frequency amplification 150.0 via email in 1~3 business day valid,,1997-1-1
GB/T 6571-1995 Semiconductor devices - Discrete devices - Part 3 : Signal(including switching)and regulator diodes 520.0 via email in 1~3 business day valid,,1996-4-1
GB/T 4587-1994 Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors 900.0 via email in 1~3 business day superseded,2024-4-1,1995-8-1
GB/T 4586-1994 Semiconductor devices－Discrete devices－Part 8: Field-effect transistors 520.0 via email in 1~3 business day valid,,1995-8-1
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GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT) 
  Issued on: 2012-12-31   Price(USD): 750.0
SJ 50033/176-2007 semiconductro discrete devices detail specification for type 3da523 silicon microwave pulse power transistor 
  Issued on: 2008-1-24   Price(USD): 120.0
SJ 50033/172-2007 semiconductro discrete devices detail specification for type 3da519 silicon microwave pulse power transistor 
  Issued on: 2008-1-24   Price(USD): 150.0
SJ 50033/170-2007 semiconductro discrete devices detail specification for type 3da516 silicon microwave pulse power transistor 
  Issued on: 2008-1-24   Price(USD): 150.0
SJ 50033/169-2004 Semiconductor discrete devices Detail specification for type 3DA510 silicon microwave pulse power transistor 
  Issued on: 2004-08-02   Price(USD): 150.0
SJ 50033/168-2004 Semiconductor discrete devices Detail specification for type 3DA509 silicon microwave pulse power transistor 
  Issued on: 2004-08-02   Price(USD): 150.0
SJ 50033/166-2004 Semiconductor discrete devices Detail specification for type 3DA507 silicon microwave pulse power transistor 
  Issued on: 2004-08-02   Price(USD): 130.0
SJ 50033/167-2004 Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor 
  Issued on: 2004-8-2   Price(USD): 130.0
SJ 50033/163-2003 Semiconductor discrete device Detail specification of type 3DK457 for power switching transistors 
  Issued on: 2003-12-15   Price(USD): 150.0
SJ/T 11225-2000 Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor 
  Issued on: 2000-08-16   Price(USD): 160.0
SJ/T 11226-2000 Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor 
  Issued on: 2000-8-16   Price(USD): 150.0
SJ/T 11227-2000 Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 
  Issued on: 2000-8-16   Price(USD): 160.0
GB/T 7576-1998 devices -Discrete devices - Part 7: Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification 
  Issued on: 1998-1-1   Price(USD): 210.0
GB/T 6219-1998 Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 
  Issued on: 1998-1-1   Price(USD): 210.0
GB/T 6217-1998 Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification 
  Issued on: 1998-1-1   Price(USD): 210.0
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications 
  Issued on: 1996-7-1   Price(USD): 180.0
GB/T 7577-1996 detail specification for case-rated bipolar transistors for low-frequency amplification 
  Issued on: 1996-7-9   Price(USD): 150.0
GB/T 6571-1995 Semiconductor devices - Discrete devices - Part 3 : Signal(including switching)and regulator diodes 
  Issued on: 1995-7-2   Price(USD): 520.0
GB/T 4587-1994 Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors 
  Issued on: 1994-12-31   Price(USD): 900.0
GB/T 4586-1994 Semiconductor devices－Discrete devices－Part 8: Field-effect transistors 
  Issued on: 1994-12-31   Price(USD): 520.0
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