Standard No.:	GB/T 14141-2009
English Name:	Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array
Chinese Name:	硅外延层、扩散层和离子注入层薄层电阻的测定 直排四探针法
Chinese Classification:	H80    Semimetal and semiconductor material in general
Professional Classification:	GB    National Standard
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Source Content Issued by:	AQSIQ; SAC
Issued on:	2009-10-30
Implemented on:	2010-6-1
Status:	valid
Superseding:	GB/T 14141-1993 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
Target Language:	English
File Format:	PDF
Word Count:	6000 words
Translation Price(USD):	180.0
Delivery:	via email in 1~3 business day

本标准规定了用直排四探针测量硅外延层、扩散层和离子注入层薄层电阻的方法。
本标准适用于测量直径大于15.9mm 的由外延、扩散、离子注入到硅片表面上或表面下形成的薄层的平均薄层电阻。硅片基体导电类型与被测薄层相反。适用于测量厚度不小于0.2μm 的薄层,方块电阻的测量范围为10Ω~5000Ω。该方法也可适用于更高或更低阻值方块电阻的测量,但其测量精确度尚未评估。