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Position: Chinese Standard in English/GB 11297.6-1989
GB 11297.6-1989   Satndard method for showing and measuring dislocation etch pits in Indium Antimonide single crystal (English Version)
Standard No.: GB 11297.6-1989 Status:valid remind me the status change

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Target Language:English File Format:PDF
Word Count: 1000 words Translation Price(USD):30.0 remind me the price change

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Implemented on:1990-1-1 Delivery: via email in 1~3 business day

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,,1990-1-1,141138133443421E580F14B5DB068
Standard No.: GB 11297.6-1989
English Name: Satndard method for showing and measuring dislocation etch pits in Indium Antimonide single crystal
Chinese Name: 锑化铟单晶位错蚀坑的腐蚀显示及测量方法
Chinese Classification: L90    Special electronic technology material
Professional Classification: GB    National Standard
Source Content Issued by: AQSIQ
Issued on: 1988-10-9
Implemented on: 1990-1-1
Status: valid
Target Language: English
File Format: PDF
Word Count: 1000 words
Translation Price(USD): 30.0
Delivery: via email in 1~3 business day
在晶体中,由于缺陷处的势能较高,在缺陷处的腐蚀速率较大,在适当的腐蚀剂中,当缺陷处的腐蚀速率远高于完整晶面的腐蚀速率时,在缺陷处就会形成位错蚀坑和其他斑痕,在金相显微镜下可以观测多种缺陷。
Code of China
Standard
GB 11297.6-1989  Satndard method for showing and measuring dislocation etch pits in Indium Antimonide single crystal (English Version)
Standard No.GB 11297.6-1989
Statusvalid
LanguageEnglish
File FormatPDF
Word Count1000 words
Price(USD)30.0
Implemented on1990-1-1
Deliveryvia email in 1~3 business day
Detail of GB 11297.6-1989
Standard No.
GB 11297.6-1989
English Name
Satndard method for showing and measuring dislocation etch pits in Indium Antimonide single crystal
Chinese Name
锑化铟单晶位错蚀坑的腐蚀显示及测量方法
Chinese Classification
L90
Professional Classification
GB
ICS Classification
Issued by
AQSIQ
Issued on
1988-10-9
Implemented on
1990-1-1
Status
valid
Superseded by
Superseded on
Abolished on
Superseding
Language
English
File Format
PDF
Word Count
1000 words
Price(USD)
30.0
Keywords
GB 11297.6-1989, GB/T 11297.6-1989, GBT 11297.6-1989, GB11297.6-1989, GB 11297.6, GB11297.6, GB/T11297.6-1989, GB/T 11297.6, GB/T11297.6, GBT11297.6-1989, GBT 11297.6, GBT11297.6
Introduction of GB 11297.6-1989
在晶体中,由于缺陷处的势能较高,在缺陷处的腐蚀速率较大,在适当的腐蚀剂中,当缺陷处的腐蚀速率远高于完整晶面的腐蚀速率时,在缺陷处就会形成位错蚀坑和其他斑痕,在金相显微镜下可以观测多种缺陷。
Contents of GB 11297.6-1989
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Keywords:
GB 11297.6-1989, GB/T 11297.6-1989, GBT 11297.6-1989, GB11297.6-1989, GB 11297.6, GB11297.6, GB/T11297.6-1989, GB/T 11297.6, GB/T11297.6, GBT11297.6-1989, GBT 11297.6, GBT11297.6