Standard No.:	GB/T 13389-2014
English Name:	Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon
Chinese Name:	掺硼掺磷掺砷硅单晶电阻率与掺杂剂浓度换算规程
Chinese Classification:	80
Professional Classification:	GB    National Standard
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Source Content Issued by:	AQSIQ; SAC
Issued on:	2014-12-31
Implemented on:	2015-9-1
Status:	valid
Superseding:	GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
Target Language:	English
File Format:	PDF
Word Count:	14500 words
Translation Price(USD):	430.0
Delivery:	via email in 1~5 business day

　　本标准规定了掺硼、掺磷、掺砷硅单晶电阻率与掺杂剂浓度之间的换算关系，该换算关系也适用于掺锑硅单晶，还可扩展至硅中激活能与硼、磷相似的其他掺杂剂。
　　
本标准适用于掺硼浓度1014 cm-3～1×1020cm-3，掺磷浓度3×1013 cm-3～1×1020 cm-3，掺砷浓度1019 cm-3～6×1020cm-3。对掺硼、掺磷的硅单晶掺杂剂浓度可扩展到1012cm-3。
本标准也可用于在23℃下从硅单晶电阻率到载流子浓度的换算，但不包括对砷掺杂剂的载流子浓度换算，或任何其他载流子浓度的换算。