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Position: Chinese Standard in English/GB/T 13539.4-2009
GB/T 13539.4-2009   Low-voltage fuses - Part 4: Supplementary requirements for fuse-links for the protection of semiconductor devices (English Version)
Standard No.: GB/T 13539.4-2009 Status:superseded remind me the status change

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Target Language:English File Format:PDF
Word Count: 18000 words Translation Price(USD):540.0 remind me the price change

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Implemented on:2009-11-1 Delivery: via email in 1~5 business day

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2016-11-01,2016-11-1,2009-11-1,14113818188301A82B700036B7FD8
Standard No.: GB/T 13539.4-2009
English Name: Low-voltage fuses - Part 4: Supplementary requirements for fuse-links for the protection of semiconductor devices
Chinese Name: 低压熔断器 第4部分:半导体设备保护用熔断体的补充要求
Chinese Classification: K31    Low-voltage distribution electrical equipment
Professional Classification: GB    National Standard
ICS Classification: 29.120.50 29.120.50    Fuses and other overcurrent protection devices 29.120.50
Source Content Issued by: AQSIQ; SAC
Issued on: 2009-04-21
Implemented on: 2009-11-1
Status: superseded
Superseded by:GB/T 13539.4-2016 Low-voltage fuses―Part 4:Supplementary requirements for fuse-links for the protection of semiconductor devices
Superseded on:2016-11-1
Abolished on:2016-11-01
Superseding:GB/T 13539.7-2005 Low-voltage fuses--Part 4-1:Supplementary requirement for fuse-links for the protection of semiconductor devices―Section I to III:Ewample of tyoles of standardized fuse-links
GB/T 13539.4-2005 Low voltage fuses - Part 4: the requirements of the protection of semiconductor devices fuse supplement
Target Language: English
File Format: PDF
Word Count: 18000 words
Translation Price(USD): 540.0
Delivery: via email in 1~5 business day
本部分的目的是确定半导体熔断体的特性,从而在相同尺寸的前提下,可以用具有相同特性的其他型式的熔断体替换半导体熔断体。因此,本部分中特别规定了:
a) 熔断体的下列特性:
1) 额定值;
2) 正常工作时的温升;
3) 耗散功率;
4) 时间电流特性;
5) 分断能力;
6) 截断电流特性和犐2狋特性;
7) 电弧电压极限值。
b) 验证熔断体特性的型式试验;
c) 熔断体标志;
d) 应提供的技术数据(见附录B)。
Code of China
Standard
GB/T 13539.4-2009  Low-voltage fuses - Part 4: Supplementary requirements for fuse-links for the protection of semiconductor devices (English Version)
Standard No.GB/T 13539.4-2009
Statussuperseded
LanguageEnglish
File FormatPDF
Word Count18000 words
Price(USD)540.0
Implemented on2009-11-1
Deliveryvia email in 1~5 business day
Detail of GB/T 13539.4-2009
Standard No.
GB/T 13539.4-2009
English Name
Low-voltage fuses - Part 4: Supplementary requirements for fuse-links for the protection of semiconductor devices
Chinese Name
低压熔断器 第4部分:半导体设备保护用熔断体的补充要求
Chinese Classification
K31
Professional Classification
GB
ICS Classification
Issued by
AQSIQ; SAC
Issued on
2009-04-21
Implemented on
2009-11-1
Status
superseded
Superseded by
GB/T 13539.4-2016 Low-voltage fuses―Part 4:Supplementary requirements for fuse-links for the protection of semiconductor devices
Superseded on
2016-11-1
Abolished on
2016-11-01
Superseding
GB/T 13539.7-2005 Low-voltage fuses--Part 4-1:Supplementary requirement for fuse-links for the protection of semiconductor devices―Section I to III:Ewample of tyoles of standardized fuse-links
GB/T 13539.4-2005 Low voltage fuses - Part 4: the requirements of the protection of semiconductor devices fuse supplement
Language
English
File Format
PDF
Word Count
18000 words
Price(USD)
540.0
Keywords
GB/T 13539.4-2009, GB 13539.4-2009, GBT 13539.4-2009, GB/T13539.4-2009, GB/T 13539.4, GB/T13539.4, GB13539.4-2009, GB 13539.4, GB13539.4, GBT13539.4-2009, GBT 13539.4, GBT13539.4
Introduction of GB/T 13539.4-2009
本部分的目的是确定半导体熔断体的特性,从而在相同尺寸的前提下,可以用具有相同特性的其他型式的熔断体替换半导体熔断体。因此,本部分中特别规定了:
a) 熔断体的下列特性:
1) 额定值;
2) 正常工作时的温升;
3) 耗散功率;
4) 时间电流特性;
5) 分断能力;
6) 截断电流特性和犐2狋特性;
7) 电弧电压极限值。
b) 验证熔断体特性的型式试验;
c) 熔断体标志;
d) 应提供的技术数据(见附录B)。
Contents of GB/T 13539.4-2009
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Keywords:
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