Standard No.:	GB/T 14141-1993
English Name:	Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
Chinese Name:	硅外延层,扩散层和离子注入层薄层电阻的测定 直排四探针法
Chinese Classification:	H21    Metal physical property test method
Professional Classification:	GB    National Standard
Source Content Issued by:	SBTS
Issued on:	1993-02-06
Implemented on:	1993-10-1
Status:	superseded
Superseded by:	GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array
Superseded on:	2010-6-1
Abolished on:	2010-06-01
Target Language:	English
File Format:	PDF
Word Count:	2500 words
Translation Price(USD):	220.0
Delivery:	via email in 1~3 business day

本标准规定了用直排四探针测量硅外延层、扩散层和离子注入层薄层电阻的方法。本标准适用于测量直径大于10.0mm用外延、扩散、离子注入到硅圆片表面上或表面下形成的薄层的平均薄层电阻。硅片基体导电类型与被测薄层相反。对于厚度为0.2~3μm的薄层，测量范围为250~5000Ω；对于厚度不小于3μm的薄层，薄层电阻的测量下限可达10Ω。