GB/T 14145-1993 English Version, GB/T 14145-1993 Test method for stacking fault density of epitaxial layers of silicon by interference contrast microscopy (English Version)

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GB/T 14145-1993 Test method for stacking fault density of epitaxial layers of silicon by interference contrast microscopy (English Version)
Standard No.:	GB/T 14145-1993	Status:	abolished remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	2000 words	Translation Price(USD):	180.0 remind me the price change Email:
Implemented on:	1993-10-1	Delivery:	via email in 1~3 business day

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Standard No.:	GB/T 14145-1993
English Name:	Test method for stacking fault density of epitaxial layers of silicon by interference contrast microscopy
Chinese Name:	硅外延层堆垛层错密度测定干涉相衬显微镜法
Chinese Classification:	H24 Metallographic testing method
Professional Classification:	GB National Standard
Source Content Issued by:	SBTS
Issued on:	1993-02-06
Implemented on:	1993-10-1
Status:	abolished
Abolished on:	2005-10-14
Target Language:	English
File Format:	PDF
Word Count:	2000 words
Translation Price(USD):	180.0
Delivery:	via email in 1~3 business day

Standard

GB/T 14145-1993 Test method for stacking fault density of epitaxial layers of silicon by interference contrast microscopy (English Version)
Standard No.	GB/T 14145-1993
Status	abolished
Language	English
File Format	PDF
Word Count	2000 words
Price(USD)	180.0
Implemented on	1993-10-1
Delivery	via email in 1~3 business day

Detail of GB/T 14145-1993

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Introduction of GB/T 14145-1993

本标准规定了使用干涉相衬显微镜非破坏性测量硅外延层堆垛层错密度的方法。本标准适用于硅外延层厚度不小于3μm、外延层晶向偏离｛111｝晶面或｛100｝晶面角度较小的试样的堆垛层错密度测量。当堆垛层错密度超过15000cm-2或当外延层晶向与｛111｝晶面或｛100｝晶面偏离角度较大时，测量精度将有所降低。

Contents of GB/T 14145-1993

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