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| Position: Chinese Standard in English/GB/T 14863-2013 |
| GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes (English Version) | |||
| Standard No.: | GB/T 14863-2013 | Status: | abolished |
| Language: | English | File Format: | |
| Word Count: | 7000 words | Price(USD): | 210.00 remind me the price change |
| Implemented on: | 2014-8-15 | Delivery: | via email in 1~3 business day |
| Standard No.: | GB/T 14863-2013 |
| English Name: | Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes |
| Chinese Name: | 用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法 |
| Chinese Classification: | H80 Semimetal and semiconductor material in general |
| Professional Classification: | GB National Standard |
| ICS Classification: | 29.045 Semiconducting materials |
| Issued by: | AQSIQ;SAC |
| Issued on: | 2013-12-31 |
| Implemented on: | 2014-8-15 |
| Status: | abolished |
| Abolished on: | 2017-12-19 |
| Superseding: | GB/T 14863-1993 test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes |
| Language: | English |
| File Format: | |
| Word Count: | 7000 words |
| Price(USD): | 210.00 |
| Delivery: | via email in 1~3 business day |