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Position: Chinese Standard in English/GB/T 17170-2015
GB/T 17170-2015   Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy (English Version)
Standard No.: GB/T 17170-2015 Status:valid remind me the status change

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Target Language:English File Format:PDF
Word Count: 3500 words Translation Price(USD):90.0 remind me the price change

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Implemented on:2016-7-1 Delivery: via email in 1~3 business day

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Standard No.: GB/T 17170-2015
English Name: Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
Chinese Name: 半绝缘砷化镓单晶深施主EL2浓度红外吸收测试方法
Chinese Classification: H17    Semimetal and semiconductor material analysis method
Professional Classification: GB    National Standard
Source Content Issued by: AQSIQ; MOH
Issued on: 2015-12-10
Implemented on: 2016-7-1
Status: valid
Superseding:GB/T 17170-1997 Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
Target Language: English
File Format: PDF
Word Count: 3500 words
Translation Price(USD): 90.0
Delivery: via email in 1~3 business day
本标准规定了半绝缘砷化镓单晶深施主 EL2浓度的红外吸收测试方法。
本标准适用于电阻率大于106 Ω・cm 的非掺杂和碳掺杂半绝缘砷化镓单晶深施主 EL2浓度的测定。
本标准不适用于掺铬半绝缘砷化镓单晶深施主 EL2浓度的测定。
Code of China
Standard
GB/T 17170-2015  Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy (English Version)
Standard No.GB/T 17170-2015
Statusvalid
LanguageEnglish
File FormatPDF
Word Count3500 words
Price(USD)90.0
Implemented on2016-7-1
Deliveryvia email in 1~3 business day
Detail of GB/T 17170-2015
Standard No.
GB/T 17170-2015
English Name
Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
Chinese Name
半绝缘砷化镓单晶深施主EL2浓度红外吸收测试方法
Chinese Classification
H17
Professional Classification
GB
ICS Classification
Issued by
AQSIQ; MOH
Issued on
2015-12-10
Implemented on
2016-7-1
Status
valid
Superseded by
Superseded on
Abolished on
Superseding
GB/T 17170-1997 Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
Language
English
File Format
PDF
Word Count
3500 words
Price(USD)
90.0
Keywords
GB/T 17170-2015, GB 17170-2015, GBT 17170-2015, GB/T17170-2015, GB/T 17170, GB/T17170, GB17170-2015, GB 17170, GB17170, GBT17170-2015, GBT 17170, GBT17170
Introduction of GB/T 17170-2015
本标准规定了半绝缘砷化镓单晶深施主 EL2浓度的红外吸收测试方法。
本标准适用于电阻率大于106 Ω・cm 的非掺杂和碳掺杂半绝缘砷化镓单晶深施主 EL2浓度的测定。
本标准不适用于掺铬半绝缘砷化镓单晶深施主 EL2浓度的测定。
Contents of GB/T 17170-2015
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