GB/T 24574-2009 English Version, GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities (English Version)

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GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities (English Version)
Standard No.:	GB/T 24574-2009	Status:	valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	7000 words	Translation Price(USD):	210.0 remind me the price change Email:
Implemented on:	2010-6-1	Delivery:	via email in 1~3 business day

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Standard No.:	GB/T 24574-2009
English Name:	Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities
Chinese Name:	硅单晶中Ⅲ-Ⅴ族杂质的光致发光测试方法
Chinese Classification:	H80 Semimetal and semiconductor material in general
Professional Classification:	GB National Standard
ICS Classification:	29.045 29.045 Semiconducting materials 29.045
Source Content Issued by:	AQSIQ;SAC
Issued on:	2009-10-30
Implemented on:	2010-6-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	7000 words
Translation Price(USD):	210.0
Delivery:	via email in 1~3 business day

GB/T 24574-2009 is referred in:

Standard

GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities (English Version)
Standard No.	GB/T 24574-2009
Status	valid
Language	English
File Format	PDF
Word Count	7000 words
Price(USD)	210.0
Implemented on	2010-6-1
Delivery	via email in 1~3 business day

Detail of GB/T 24574-2009

Standard No.

English Name

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Professional Classification

ICS Classification

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Keywords

Introduction of GB/T 24574-2009

本标准规定了硅单晶中Ⅲ-Ⅴ族杂质的光致发光测试方法。
本标准适用于低位错单晶硅中导电性杂质硼和磷含量的同时测定。
本标准用于检测单晶硅中含量为1×1011at·cm-3~5×1015at·cm-3的各种电活性杂质元素。

Contents of GB/T 24574-2009

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Keywords:
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