Standard No.:	GB/T 24580-2009
English Name:	Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
Chinese Name:	重掺n型硅衬底中硼沾污的二次离子质谱检测方法
Chinese Classification:	H80    Semimetal and semiconductor material in general
Professional Classification:	GB    National Standard
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Source Content Issued by:	AQSIQ;SAC
Issued on:	2009-10-30
Implemented on:	2010-6-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	6000 words
Translation Price(USD):	180.0
Delivery:	via email in 1~3 business day

本标准规定了重掺n型硅衬底中硼沾污的二次离子质谱测试方法。本标准适用于二次离子质谱法(SIMS)对重掺n型硅衬底单晶体材料中痕量硼沾污(总量)的测试。
1.2 本标准适用于对锑?砷?磷的掺杂浓度<0.2%(1×1020atoms/cm3)的硅材料中硼浓度的检测。
特别适用于硼为非故意掺杂的p 型杂质,且其浓度为痕量水平(<5×1014 atoms/cm3)的硅材料的测试。
本标准适用于检测硼沾污浓度大于SIMS 仪器检测限(根据仪器的型号不同,检测限大约在5×1012atoms/cm3~5×1013atoms/cm3)两倍的硅材料。