Standard No.:	GB/T 35306-2017
English Name:	Test method for carbon and oxygen content of single crystal silicon―Low temperature fourier transform infrared spectrometry
Chinese Name:	硅单晶中碳、氧含量的测定 低温傅立叶变换红外光谱法
Chinese Classification:	H17    Semimetal and semiconductor material analysis method
Professional Classification:	GB    National Standard
Source Content Issued by:	AQSIQ; SAC
Issued on:	2017-12-29
Implemented on:	2018-7-1
Status:	superseded
Superseded by:	GB/T 35306-2023
Superseded on:	2024-3-1
Target Language:	English
File Format:	PDF
Word Count:	5500 words
Translation Price(USD):	165.0
Delivery:	via email in 1~3 business day

本标准规定了低温傅立叶变换红外光谱法测定硅单晶中代位碳、间隙氧杂质含量的方法。
本标准适用于室温电阻率大于0.1 Ω・cm的N型硅单晶和室温电阻率大于0.5 Ω・cm的P型硅单晶中代位碳、间隙氧杂质含量的测定。