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Position: Chinese Standard in English/GB/T 36474-2018
GB/T 36474-2018   Semiconductor integrated circuit—Measuring methods for double data rate 3 synchronous dynamic random access memory(DDR3 SDRAM) (English Version)
Standard No.: GB/T 36474-2018 Status:valid remind me the status change

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Target Language:English File Format:PDF
Word Count: 8500 words Translation Price(USD):250.0 remind me the price change

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Implemented on:2019-1-1 Delivery: via email in 1~3 business day

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Standard No.: GB/T 36474-2018
English Name: Semiconductor integrated circuit—Measuring methods for double data rate 3 synchronous dynamic random access memory(DDR3 SDRAM)
Chinese Name: 半导体集成电路 第三代双倍数据速率同步动态随机存储器 (DDR3 SDRAM)测试方法
Chinese Classification: L56    Semiconductor integrated circuit
Professional Classification: GB    National Standard
Source Content Issued by: SAMR; SAC
Issued on: 2018-06-07
Implemented on: 2019-1-1
Status: valid
Target Language: English
File Format: PDF
Word Count: 8500 words
Translation Price(USD): 250.0
Delivery: via email in 1~3 business day
本标准规定了半导体集成电路第三代双倍数据速率同步动态随机存储器(DDR3 SDRAM)功能验证和电参数测试的方法。
本标准适用于半导体集成电路领域中第三代双倍数据速率同步动态随机存储器(DDR3 SDRAM)功能验证和电参数测试。
Code of China
Standard
GB/T 36474-2018  Semiconductor integrated circuit—Measuring methods for double data rate 3 synchronous dynamic random access memory(DDR3 SDRAM) (English Version)
Standard No.GB/T 36474-2018
Statusvalid
LanguageEnglish
File FormatPDF
Word Count8500 words
Price(USD)250.0
Implemented on2019-1-1
Deliveryvia email in 1~3 business day
Detail of GB/T 36474-2018
Standard No.
GB/T 36474-2018
English Name
Semiconductor integrated circuit—Measuring methods for double data rate 3 synchronous dynamic random access memory(DDR3 SDRAM)
Chinese Name
半导体集成电路 第三代双倍数据速率同步动态随机存储器 (DDR3 SDRAM)测试方法
Chinese Classification
L56
Professional Classification
GB
ICS Classification
Issued by
SAMR; SAC
Issued on
2018-06-07
Implemented on
2019-1-1
Status
valid
Superseded by
Superseded on
Abolished on
Superseding
Language
English
File Format
PDF
Word Count
8500 words
Price(USD)
250.0
Keywords
GB/T 36474-2018, GB 36474-2018, GBT 36474-2018, GB/T36474-2018, GB/T 36474, GB/T36474, GB36474-2018, GB 36474, GB36474, GBT36474-2018, GBT 36474, GBT36474
Introduction of GB/T 36474-2018
本标准规定了半导体集成电路第三代双倍数据速率同步动态随机存储器(DDR3 SDRAM)功能验证和电参数测试的方法。
本标准适用于半导体集成电路领域中第三代双倍数据速率同步动态随机存储器(DDR3 SDRAM)功能验证和电参数测试。
Contents of GB/T 36474-2018
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Keywords:
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