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Position: Chinese Standard in English/GB/T 4059-1983
GB/T 4059-1983   Polycrystalline silicon; Examination method; Zone-melting on phosphorus under controlled atmosphere (English Version)
Standard No.: GB/T 4059-1983 Status:superseded remind me the status change

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Target Language:English File Format:PDF
Word Count: 1500 words Translation Price(USD):224.0 remind me the price change

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Implemented on:1984-1-2 Delivery: via email in 1~3 business day

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,2008-2-1,1984-1-2,B8A1F058B9A0693D1422613507989
Standard No.: GB/T 4059-1983
English Name: Polycrystalline silicon; Examination method; Zone-melting on phosphorus under controlled atmosphere
Chinese Name: 硅多晶气氛区熔磷检验方法
Chinese Classification: H21    Metal physical property test method
Professional Classification: GB    National Standard
ICS Classification: 77.040.30 77.040.30    Chemical analysis of metals 77.040.30
Source Content Issued by: China State Bureau of Standards
Issued on: 1983-01-02
Implemented on: 1984-1-2
Status: superseded
Superseded by:GB/T 4059-2007 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere
Superseded on:2008-2-1
Target Language: English
File Format: PDF
Word Count: 1500 words
Translation Price(USD): 224.0
Delivery: via email in 1~3 business day
本标准适用于三氯氢硅及四氯化硅氢还原在细硅芯上沉积硅多晶所生长出来的硅多晶棒。
Code of China
Standard
GB/T 4059-1983  Polycrystalline silicon; Examination method; Zone-melting on phosphorus under controlled atmosphere (English Version)
Standard No.GB/T 4059-1983
Statussuperseded
LanguageEnglish
File FormatPDF
Word Count1500 words
Price(USD)224.0
Implemented on1984-1-2
Deliveryvia email in 1~3 business day
Detail of GB/T 4059-1983
Standard No.
GB/T 4059-1983
English Name
Polycrystalline silicon; Examination method; Zone-melting on phosphorus under controlled atmosphere
Chinese Name
硅多晶气氛区熔磷检验方法
Chinese Classification
H21
Professional Classification
GB
ICS Classification
Issued by
China State Bureau of Standards
Issued on
1983-01-02
Implemented on
1984-1-2
Status
superseded
Superseded by
GB/T 4059-2007 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere
Superseded on
2008-2-1
Abolished on
Superseding
Language
English
File Format
PDF
Word Count
1500 words
Price(USD)
224.0
Keywords
GB/T 4059-1983, GB 4059-1983, GBT 4059-1983, GB/T4059-1983, GB/T 4059, GB/T4059, GB4059-1983, GB 4059, GB4059, GBT4059-1983, GBT 4059, GBT4059
Introduction of GB/T 4059-1983
本标准适用于三氯氢硅及四氯化硅氢还原在细硅芯上沉积硅多晶所生长出来的硅多晶棒。
Contents of GB/T 4059-1983
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Keywords:
GB/T 4059-1983, GB 4059-1983, GBT 4059-1983, GB/T4059-1983, GB/T 4059, GB/T4059, GB4059-1983, GB 4059, GB4059, GBT4059-1983, GBT 4059, GBT4059