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| Position: Chinese Standard in English/GB/T 41751-2022 |
| GB/T 41751-2022 Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers (English Version) | |||
| Standard No.: | GB/T 41751-2022 | Status: | valid remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 5500 words | Translation Price(USD): | 165.0 remind me the price change |
| Implemented on: | 2023-2-1 | Delivery: | via email in 1~3 business day |
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| Standard No.: | GB/T 41751-2022 |
| English Name: | Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers |
| Chinese Name: | 氮化镓单晶衬底片晶面曲率半径测试方法 |
| Chinese Classification: | H21 Metal physical property test method |
| Professional Classification: | GB National Standard |
| Source Content Issued by: | SAMR; SAC |
| Issued on: | 2022-10-12 |
| Implemented on: | 2023-2-1 |
| Status: | valid |
| Target Language: | English |
| File Format: | |
| Word Count: | 5500 words |
| Translation Price(USD): | 165.0 |
| Delivery: | via email in 1~3 business day |