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| Position: Chinese Standard in English/GB/T 45716-2025 |
| GB/T 45716-2025 Semiconductor devices—Bias temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs) (English Version) | |||
| Standard No.: | GB/T 45716-2025 | Status: | valid remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 9000 words | Translation Price(USD): | 270.0 remind me the price change |
| Implemented on: | 2025-9-1 | Delivery: | via email in 1~3 business day |
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| Standard No.: | GB/T 45716-2025 |
| English Name: | Semiconductor devices—Bias temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs) |
| Chinese Name: | 半导体器件 金属氧化物半导体场效应晶体管（MOSFETs）的偏置温度不稳定性试验 |
| Chinese Classification: | L40 Semiconductor discrete devices in general |
| Professional Classification: | GB National Standard |
| ICS Classification: | 31.080.01 Semiconductor devices in general |
| Source Content Issued by: | SAMR; SAC |
| Issued on: | 2025-05-30 |
| Implemented on: | 2025-9-1 |
| Status: | valid |
| Target Language: | English |
| File Format: | |
| Word Count: | 9000 words |
| Translation Price(USD): | 270.0 |
| Delivery: | via email in 1~3 business day |