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Position: Chinese Standard in English/GB/T 45718-2025
GB/T 45718-2025   Semiconductor devices—Time dependent dielectric breakdown (TDDB) test for inter-metal layers (English Version)
Standard No.: GB/T 45718-2025 Status:to be valid
Target Language:English File Format:PDF
Word Count: 10500 words Translation Price(USD):315.00 remind me the price change
Implemented on:2025-9-1 Delivery: via email in 1~5 business day
Standard No.: GB/T 45718-2025
English Name: Semiconductor devices—Time dependent dielectric breakdown (TDDB) test for inter-metal layers
Chinese Name: 半导体器件 内部金属层间的时间相关介电击穿(TDDB)试验
Chinese Classification: L40    Semiconductor discrete devices in general
Professional Classification: GB    National Standard
ICS Classification: 31.080.01 31.080.01    Semiconductor devices in general 31.080.01
Source Content Issued by: SAMR; SAC
Issued on: 2025-05-30
Implemented on: 2025-9-1
Status: to be valid
Target Language: English
File Format: PDF
Word Count: 10500 words
Translation Price(USD): 315.00
Delivery: via email in 1~5 business day
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