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Position: Chinese Standard in English/GB/T 45718-2025 |
GB/T 45718-2025 Semiconductor devices—Time dependent dielectric breakdown (TDDB) test for inter-metal layers (English Version) | |||
Standard No.: | GB/T 45718-2025 | Status: | to be valid |
Target Language: | English | File Format: | |
Word Count: | 10500 words | Translation Price(USD): | 315.00 remind me the price change |
Implemented on: | 2025-9-1 | Delivery: | via email in 1~5 business day |
Standard No.: | GB/T 45718-2025 |
English Name: | Semiconductor devices—Time dependent dielectric breakdown (TDDB) test for inter-metal layers |
Chinese Name: | 半导体器件 内部金属层间的时间相关介电击穿(TDDB)试验 |
Chinese Classification: | L40 Semiconductor discrete devices in general |
Professional Classification: | GB National Standard |
ICS Classification: | 31.080.01 Semiconductor devices in general |
Source Content Issued by: | SAMR; SAC |
Issued on: | 2025-05-30 |
Implemented on: | 2025-9-1 |
Status: | to be valid |
Target Language: | English |
File Format: | |
Word Count: | 10500 words |
Translation Price(USD): | 315.00 |
Delivery: | via email in 1~5 business day |
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Keywords: | ||
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