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Position: Chinese Standard in English/GB/T 6616-2009
GB/T 6616-2009   Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge (English Version)
Standard No.: GB/T 6616-2009 Status:superseded remind me the status change

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Target Language:English File Format:PDF
Word Count: 6000 words Translation Price(USD):150.0 remind me the price change

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Implemented on:2010-6-1 Delivery: via email in 1~3 business day

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,2024-3-1,2010-6-1,14113818188087360888571D4C2D9
Standard No.: GB/T 6616-2009
English Name: Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
Chinese Name: 半导体硅片电阻率及硅薄膜薄层电阻测试方法 非接触涡流法
Chinese Classification: H80    Semimetal and semiconductor material in general
Professional Classification: GB    National Standard
ICS Classification: 29.045 29.045    Semiconducting materials 29.045
Source Content Issued by: AQSIQ; SAC
Issued on: 2009-10-30
Implemented on: 2010-6-1
Status: superseded
Superseded by:GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
Superseded on:2024-3-1
Superseding:GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
Target Language: English
File Format: PDF
Word Count: 6000 words
Translation Price(USD): 150.0
Delivery: via email in 1~3 business day
本标准规定了用非接触涡流测定半导体硅片电阻率和薄膜薄层电阻的方法。
本标准适用于测量直径或边长大于25mm、厚度为0.1mm~1mm 的硅单晶切割片、研磨片和抛光片的电阻率及硅薄膜的薄层电阻。测量薄膜薄层电阻时,衬底的有效薄层电阻至少应为薄膜薄层电阻的1000倍。
Code of China
Standard
GB/T 6616-2009  Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge (English Version)
Standard No.GB/T 6616-2009
Statussuperseded
LanguageEnglish
File FormatPDF
Word Count6000 words
Price(USD)150.0
Implemented on2010-6-1
Deliveryvia email in 1~3 business day
Detail of GB/T 6616-2009
Standard No.
GB/T 6616-2009
English Name
Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
Chinese Name
半导体硅片电阻率及硅薄膜薄层电阻测试方法 非接触涡流法
Chinese Classification
H80
Professional Classification
GB
ICS Classification
Issued by
AQSIQ; SAC
Issued on
2009-10-30
Implemented on
2010-6-1
Status
superseded
Superseded by
GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
Superseded on
2024-3-1
Abolished on
Superseding
GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
Language
English
File Format
PDF
Word Count
6000 words
Price(USD)
150.0
Keywords
GB/T 6616-2009, GB 6616-2009, GBT 6616-2009, GB/T6616-2009, GB/T 6616, GB/T6616, GB6616-2009, GB 6616, GB6616, GBT6616-2009, GBT 6616, GBT6616
Introduction of GB/T 6616-2009
本标准规定了用非接触涡流测定半导体硅片电阻率和薄膜薄层电阻的方法。
本标准适用于测量直径或边长大于25mm、厚度为0.1mm~1mm 的硅单晶切割片、研磨片和抛光片的电阻率及硅薄膜的薄层电阻。测量薄膜薄层电阻时,衬底的有效薄层电阻至少应为薄膜薄层电阻的1000倍。
Contents of GB/T 6616-2009
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Keywords:
GB/T 6616-2009, GB 6616-2009, GBT 6616-2009, GB/T6616-2009, GB/T 6616, GB/T6616, GB6616-2009, GB 6616, GB6616, GBT6616-2009, GBT 6616, GBT6616