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Standard
| SJ 20858-2002 Measuring methods for electrical parameters of silicon carbide single crystal material (English Version) |
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Detail of SJ 20858-2002
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Introduction of SJ 20858-2002
本标准规定了碳化硅单晶材料的电阻率、霍尔迁移率测试方法。本标准适用于温度在20℃～700℃范围内的4H-SiC、6H-SiC等低阻碳化硅体单晶材料的电阻率、霍尔迁移率测量。
Contents of SJ 20858-2002