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Position: Chinese Standard in English/SJ 2658.9-1986
SJ 2658.9-1986   Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for the Intensity Space Distribution and Half-intensity Angle of Radiation (English Version)
Standard No.: SJ 2658.9-1986 Status:superseded remind me the status change

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Target Language:English File Format:PDF
Word Count: 2500 words Translation Price(USD):75.0 remind me the price change

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Implemented on:1986-10-1 Delivery: via email in 1~3 business day

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,2016-4-1,1986-10-1,264F2F51129EBE491419300922906
Standard No.: SJ 2658.9-1986
English Name: Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for the Intensity Space Distribution and Half-intensity Angle of Radiation
Chinese Name: 半导体红外发光二极管测试方法 辐射强度空间分布和半强度角的测试方法
Chinese Classification: L53    Semiconductor emitting device
Professional Classification: SJ    Professional Standard - Electronics
Implemented on: 1986-10-1
Status: superseded
Superseded by:SJ/T 2658.9-2015 Measuring method for semiconductor infiared-emitting diode. Part 9: Spatial distribution of radiant intensity and half-intensity angle
Superseded on:2016-4-1
Target Language: English
File Format: PDF
Word Count: 2500 words
Translation Price(USD): 75.0
Delivery: via email in 1~3 business day
Code of China
Standard
SJ 2658.9-1986  Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for the Intensity Space Distribution and Half-intensity Angle of Radiation (English Version)
Standard No.SJ 2658.9-1986
Statussuperseded
LanguageEnglish
File FormatPDF
Word Count2500 words
Price(USD)75.0
Implemented on1986-10-1
Deliveryvia email in 1~3 business day
Detail of SJ 2658.9-1986
Standard No.
SJ 2658.9-1986
English Name
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for the Intensity Space Distribution and Half-intensity Angle of Radiation
Chinese Name
半导体红外发光二极管测试方法 辐射强度空间分布和半强度角的测试方法
Chinese Classification
L53
Professional Classification
SJ
ICS Classification
Issued by
Issued on
Implemented on
1986-10-1
Status
superseded
Superseded by
SJ/T 2658.9-2015 Measuring method for semiconductor infiared-emitting diode. Part 9: Spatial distribution of radiant intensity and half-intensity angle
Superseded on
2016-4-1
Abolished on
Superseding
Language
English
File Format
PDF
Word Count
2500 words
Price(USD)
75.0
Keywords
SJ 2658.9-1986, SJ/T 2658.9-1986, SJT 2658.9-1986, SJ2658.9-1986, SJ 2658.9, SJ2658.9, SJ/T2658.9-1986, SJ/T 2658.9, SJ/T2658.9, SJT2658.9-1986, SJT 2658.9, SJT2658.9
Introduction of SJ 2658.9-1986
Contents of SJ 2658.9-1986
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Keywords:
SJ 2658.9-1986, SJ/T 2658.9-1986, SJT 2658.9-1986, SJ2658.9-1986, SJ 2658.9, SJ2658.9, SJ/T2658.9-1986, SJ/T 2658.9, SJ/T2658.9, SJT2658.9-1986, SJT 2658.9, SJT2658.9