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| Position: Chinese Standard in English/SJ 50033/120-1997 |
| SJ 50033/120-1997 Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor (English Version) | |||
| Standard No.: | SJ 50033/120-1997 | Status: | valid remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 10000 words | Translation Price(USD): | 300.0 remind me the price change |
| Implemented on: | 1997-10-1 | Delivery: | via email in 1~3 business day |
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| Standard No.: | SJ 50033/120-1997 |
| English Name: | Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor |
| Chinese Name: | 半导体分立器件CS205型砷化镓微波功率场效应晶体管详细规范 |
| Chinese Classification: | L5961 |
| Professional Classification: | SJ Professional Standard - Electronics |
| Source Content Issued by: | MOEI |
| Issued on: | 1997-6-17 |
| Implemented on: | 1997-10-1 |
| Status: | valid |
| Target Language: | English |
| File Format: | |
| Word Count: | 10000 words |
| Translation Price(USD): | 300.0 |
| Delivery: | via email in 1~3 business day |