SJ/T 11976-2025 English Version, SJ/T 11976-2025 Neutron transmutation doped float zone silicon single crystal for Insulate GateBipolar Transistors(IGBT) (English Version)

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SJ/T 11976-2025 Neutron transmutation doped float zone silicon single crystal for Insulate GateBipolar Transistors(IGBT) (English Version)
Standard No.:	SJ/T 11976-2025	Status:	valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	9500 words	Translation Price(USD):	285.0 remind me the price change Email:
Implemented on:	2025-8-1	Delivery:	via email in 1~3 business day

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Standard No.:	SJ/T 11976-2025
English Name:	Neutron transmutation doped float zone silicon single crystal for Insulate GateBipolar Transistors(IGBT)
Chinese Name:	绝缘栅双极晶体管（IGBT）用中子嬗变掺杂区熔硅单晶
Professional Classification:	SJ Professional Standard - Electronics
Source Content Issued by:	MIIT
Issued on:	2025-05-09
Implemented on:	2025-8-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	9500 words
Translation Price(USD):	285.0
Delivery:	via email in 1~3 business day

Standard

SJ/T 11976-2025 Neutron transmutation doped float zone silicon single crystal for Insulate GateBipolar Transistors(IGBT) (English Version)
Standard No.	SJ/T 11976-2025
Status	valid
Language	English
File Format	PDF
Word Count	9500 words
Price(USD)	285.0
Implemented on	2025-8-1
Delivery	via email in 1~3 business day

Detail of SJ/T 11976-2025

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Introduction of SJ/T 11976-2025

本文件规定了IGBT用中子嬗变掺杂区熔硅单晶（以下简称NTD硅单晶）的术语和定义、技术要求、试验方法、检验规则以及标志、包装、运输、贮存和质量证明书等。
本文件适用于IGBT产品用NTD硅单晶。

Contents of SJ/T 11976-2025

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