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| Position: Chinese Standard in English/SJ/T 1472-2016 |
| SJ/T 1472-2016 Semiconductor discrete devices Detail specification for type 3CG110 high frequency low power PNP silicon transistor (English Version) | |||
| Standard No.: | SJ/T 1472-2016 | Status: | valid remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 7500 words | Translation Price(USD): | 224.0 remind me the price change |
| Implemented on: | 2016-9-1 | Delivery: | via email in 1~3 business day |
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| Standard No.: | SJ/T 1472-2016 |
| English Name: | Semiconductor discrete devices Detail specification for type 3CG110 high frequency low power PNP silicon transistor |
| Chinese Name: | 半导体分立器件 3CG110型硅PNP高频小功率晶体管详细规范 |
| Professional Classification: | SJ Professional Standard - Electronics |
| Source Content Issued by: | Ministry of Industry and Information Technology |
| Issued on: | 2016-04-05 |
| Implemented on: | 2016-9-1 |
| Status: | valid |
| Superseding: | SJ 1472-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG110 |
| Target Language: | English |
| File Format: | |
| Word Count: | 7500 words |
| Translation Price(USD): | 224.0 |
| Delivery: | via email in 1~3 business day |