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| Position: Chinese Standard in English/SJ/T 1486-2016 |
| SJ/T 1486-2016 Semiconductor discrete devices Detail specification for type 3CG180 high frequency high voltage low power PNP silicon transisto (English Version) | |||
| Standard No.: | SJ/T 1486-2016 | Status: | valid remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 7000 words | Translation Price(USD): | 224.0 remind me the price change |
| Implemented on: | 2016-9-1 | Delivery: | via email in 1~3 business day |
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| Standard No.: | SJ/T 1486-2016 |
| English Name: | Semiconductor discrete devices Detail specification for type 3CG180 high frequency high voltage low power PNP silicon transisto |
| Chinese Name: | 半导体分立器件 3CG180型硅ＰＮＰ高频高反压小功率晶体管详细规范 |
| Professional Classification: | SJ Professional Standard - Electronics |
| Source Content Issued by: | Ministry of Industry and Information Technology |
| Issued on: | 2016-04-05 |
| Implemented on: | 2016-9-1 |
| Status: | valid |
| Superseding: | SJ 1486-1979 Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG180 |
| Target Language: | English |
| File Format: | |
| Word Count: | 7000 words |
| Translation Price(USD): | 224.0 |
| Delivery: | via email in 1~3 business day |