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Position: Chinese Standard in English/T/CASAS 021-2024 |
T/CASAS 021-2024 Threshold voltage test method for silicon carbide metal-oxide semiconductor field effect transistor(SiC MOSFETs) (English Version) | |||
Standard No.: | T/CASAS 021-2024 | Status: | valid remind me the status change |
Language: | English | File Format: | |
Word Count: | Price(USD): | remind me the price change | |
Implemented on: | 2024-11-19 | Delivery: | |
Standard No.: | T/CASAS 021-2024 |
English Name: | Threshold voltage test method for silicon carbide metal-oxide semiconductor field effect transistor(SiC MOSFETs) |
Chinese Name: | 碳化硅金属氧化物半导体场效应晶体管(SiC MOSFE阈值电压测试方法 |
Chinese Classification: | L40/49 |
Professional Classification: | T/ Social Organization Standard |
Issued by: | China Advanced Semiconductor Industry Innovation Alliance Standardization Committee |
Issued on: | 2024-11-19 |
Implemented on: | 2024-11-19 |
Status: | valid |
Language: | English |
File Format: |
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Keywords: | ||
T/CASAS 021-2024, T/CASAST 021-2024, TCASAST 021-2024, T/CASAS021-2024, T/CASAS 021, T/CASAS021, T/CASAST021-2024, T/CASAST 021, T/CASAST021, TCASAST021-2024, TCASAST 021, TCASAST021 |