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| Position: Chinese Standard in English/T/CASAS 045-2024 |
| T/CASAS 045-2024 Dynamic gate stress test method for silicon carbide metal-oxide semiconductor field effect transistor（SiC MOSFET） (English Version) | |||
| Standard No.: | T/CASAS 045-2024 | Status: | valid remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | Translation Price(USD): | remind me the price change | |
| Implemented on: | 2024-11-19 | Delivery: | |
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| Standard No.: | T/CASAS 045-2024 |
| English Name: | Dynamic gate stress test method for silicon carbide metal-oxide semiconductor field effect transistor（SiC MOSFET） |
| Chinese Name: | 碳化硅金属氧化物半导体场效应晶体管（SiC MOSFET）动态栅偏试验方法 |
| Chinese Classification: | L40/49 |
| Professional Classification: | T/ Social Organization Standard |
| Source Content Issued by: | China Advanced Semiconductor Industry Innovation Alliance Standardization Committee |
| Issued on: | 2024-11-19 |
| Implemented on: | 2024-11-19 |
| Status: | valid |
| Target Language: | English |
| File Format: |