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Position: Chinese Standard in English/T/CASAS 046-2024
T/CASAS 046-2024   Dynamic reverse bias (DRB) test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) (English Version)
Standard No.: T/CASAS 046-2024 Status:valid remind me the status change
Language:English File Format:PDF
Word Count: Price(USD): remind me the price change
Implemented on:2024-11-19 Delivery:
Standard No.: T/CASAS 046-2024
English Name: Dynamic reverse bias (DRB) test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET)
Chinese Name: 碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)动态反偏(DRB)试验方法
Chinese Classification: L40/49    
Professional Classification: T/    Social Organization Standard
Issued by: China Advanced Semiconductor Industry Innovation Alliance Standardization Committee
Issued on: 2024-11-19
Implemented on: 2024-11-19
Status: valid
Language: English
File Format: PDF
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Keywords:
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