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| Position: Chinese Standard in English/GB 5820.2-1986 |
| GB 5820.2-1986 Detail specification for electronic components--Bipolar transistors for ambient-rated low and high frequency amplification types 3DG111B, 3DG111C, 3DG111E, 3DG111F (English Version) | |||
| Standard No.: | GB 5820.2-1986 | Status: | superseded remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 6000 words | Translation Price(USD): | 180.0 remind me the price change |
| Implemented on: | 1986-9-1 | Delivery: | via email in 1~3 business day |
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| Standard No.: | GB 5820.2-1986 |
| English Name: | Detail specification for electronic components--Bipolar transistors for ambient-rated low and high frequency amplification types 3DG111B, 3DG111C, 3DG111E, 3DG111F |
| Chinese Name: | 电子器件详细规范 3DG111B、3DG111C、3DG111E、3DG111F型环境额定高低频放大双极型晶体管(可供认证用) |
| Chinese Classification: | L21 Quartz crystal and piezoelectric element |
| Professional Classification: | GB National Standard |
| Implemented on: | 1986-9-1 |
| Status: | superseded |
| Superseded by: | SJ/T 10771-1996 Detailed specifications for electronic components - 3DG111B (111C, 111E and 111F) ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification) |
| Superseded on: | 1997-1-1 |
| Target Language: | English |
| File Format: | |
| Word Count: | 6000 words |
| Translation Price(USD): | 180.0 |
| Delivery: | via email in 1~3 business day |