Standard No.:	GB/T 14146-2009
English Name:	Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
Chinese Name:	硅外延层载流子浓度测定 汞探针电容-电压法
Chinese Classification:	H80    Semimetal and semiconductor material in general
Professional Classification:	GB    National Standard
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Source Content Issued by:	AQSIQ; SAC
Issued on:	2009-10-30
Implemented on:	2010-6-1
Status:	superseded
Superseded by:	GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method
Superseded on:	2021-12-1
Superseding:	GB/T 14146-1993 Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Valtage-capacitance method
Target Language:	English
File Format:	PDF
Word Count:	6000 words
Translation Price(USD):	160.0
Delivery:	via email in 1~3 business day

本标准规定了硅外延层载流子浓度汞探针电容电压测量方法。
本标准适用于同质的硅外延层载流子浓度测量。测量范围为:4×1013cm-3~8×1016cm-3。
本标准测试的硅外延层的厚度必须大于测试偏压下耗尽层的深度。
本标准也可适用于硅抛光片的载流子浓度测量。