GB/T 14146-2021 English Version, GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method (English Version)

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GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method (English Version)
Standard No.:	GB/T 14146-2021	Status:	valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	7500 words	Translation Price(USD):	240.0 remind me the price change Email:
Implemented on:	2021-12-1	Delivery:	via email in 1~3 business day

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Standard No.:	GB/T 14146-2021
English Name:	Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method
Chinese Name:	硅外延层载流子浓度的测试电容-电压法
Chinese Classification:	H21 Metal physical property test method
Professional Classification:	GB National Standard
Source Content Issued by:	SAMR; SAC
Issued on:	2021-05-21
Implemented on:	2021-12-1
Status:	valid
Superseding:	GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
Target Language:	English
File Format:	PDF
Word Count:	7500 words
Translation Price(USD):	240.0
Delivery:	via email in 1~3 business day

Standard

GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method (English Version)
Standard No.	GB/T 14146-2021
Status	valid
Language	English
File Format	PDF
Word Count	7500 words
Price(USD)	240.0
Implemented on	2021-12-1
Delivery	via email in 1~3 business day

Detail of GB/T 14146-2021

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Introduction of GB/T 14146-2021

本文件规定了电容?电压法测试硅外延层载流子浓度的方法，包括汞探针电容?电压法和无接触电容?电压法。本文件适用于同质硅外延层载流子浓度的测试，测试范围为4×1013 cm-3～8×1016 cm-3，其中硅外延层的厚度大于测试偏压下耗尽层深度的两倍。硅单晶抛光片和同质碳化硅外延片载流子浓度的测试也可以参照本文件进行，其中无接触电容?电压法不适用于同质碳化硅外延片载流子浓度的测试。

Contents of GB/T 14146-2021

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Keywords:
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