Standard No.:	GB/T 14847-2010
English Name:	Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
Chinese Name:	重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
Chinese Classification:	H80    Semimetal and semiconductor material in general
Professional Classification:	GB    National Standard
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Source Content Issued by:	AQSIQ;SAC
Issued on:	2011-1-10
Implemented on:	2011-10-1
Status:	superseded
Superseded by:	GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates - Infrared reflectance method
Superseded on:	2026-5-1
Superseding:	GB/T 14847-1993 Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance
Target Language:	English
File Format:	PDF
Word Count:	6000 words
Translation Price(USD):	180.0
Delivery:	via email in 1~3 business day

本标准规定重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法。
本标准适用于衬底在23℃电阻率小于0.02Ω·cm 和外延层在23℃电阻率大于0.1Ω·cm 且外延层厚度大于2μm 的n型和p型硅外延层厚度的测量;在降低精度情况下,该方法原则上也适用于测试0.5μm~2μm 之间的n型和p型外延层厚度。