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| Position: Chinese Standard in English/GB/T 14847-2025 |
| GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates - Infrared reflectance method (English Version) | |||
| Standard No.: | GB/T 14847-2025 | Status: | to be valid remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 6500 words | Translation Price(USD): | 195.0 remind me the price change |
| Implemented on: | 2026-5-1 | Delivery: | via email in 1~3 business day |
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| Standard No.: | GB/T 14847-2025 |
| English Name: | Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates - Infrared reflectance method |
| Chinese Name: | 重掺杂衬底上轻掺杂硅外延层厚度的测试 红外反射法 |
| Chinese Classification: | H21 Metal physical property test method |
| Professional Classification: | GB National Standard |
| Source Content Issued by: | SAMR, SAC |
| Issued on: | 2025-10-31 |
| Implemented on: | 2026-5-1 |
| Status: | to be valid |
| Superseding: | GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance |
| Target Language: | English |
| File Format: | |
| Word Count: | 6500 words |
| Translation Price(USD): | 195.0 |
| Delivery: | via email in 1~3 business day |