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| Position: Chinese Standard in English/GB/T 1551-2009 |
| GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon (English Version) | |||
| Standard No.: | GB/T 1551-2009 | Status: | superseded remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 12000 words | Translation Price(USD): | 360.0 remind me the price change |
| Implemented on: | 2010-6-1 | Delivery: | via email in 1~3 business day |
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| Standard No.: | GB/T 1551-2009 |
| English Name: | Test method for measuring resistivity of monocrystal silicon |
| Chinese Name: | 硅单晶电阻率测定方法 |
| Chinese Classification: | H80 Semimetal and semiconductor material in general |
| Professional Classification: | GB National Standard |
| ICS Classification: | 29.045 Semiconducting materials |
| Source Content Issued by: | AQSIQ; SAC |
| Issued on: | 2009-10-30 |
| Implemented on: | 2010-6-1 |
| Status: | superseded |
| Superseded by: | GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method |
| Superseded on: | 2021-12-1 |
| Superseding: | GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe |
| Target Language: | English |
| File Format: | |
| Word Count: | 12000 words |
| Translation Price(USD): | 360.0 |
| Delivery: | via email in 1~3 business day |