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Position: Chinese Standard in English/GB/T 1552-1995
GB/T 1552-1995   Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array (English Version)
Standard No.: GB/T 1552-1995 Status:superseded remind me the status change

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Target Language:English File Format:PDF
Word Count: 8000 words Translation Price(USD):240.0 remind me the price change

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Implemented on:1995-1-2 Delivery: via email in 1~3 business day

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,2010-6-1,1995-1-2,4D8612E48F04C4F41422616430861
Standard No.: GB/T 1552-1995
English Name: Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
Chinese Name: 硅、锗单晶电阻率测定直排四探针法
Chinese Classification: H21    Metal physical property test method
Professional Classification: GB    National Standard
ICS Classification: 77.040.30 77.040.30    Chemical analysis of metals 77.040.30
Source Content Issued by: STSB
Issued on: 1995-04-18
Implemented on: 1995-1-2
Status: superseded
Superseded by:GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
Superseded on:2010-6-1
Superseding:GB 1552-1979 Measurement of resistivity for monocrystalline silicon with D-C four point probe
GB 5251-1985 Germanium monocrystal--Examination of resistivity--DC linear four-point probe
GB 6615-1986 Standard method for resistivity of silicon slices with collinear four-probe array measuring
Target Language: English
File Format: PDF
Word Count: 8000 words
Translation Price(USD): 240.0
Delivery: via email in 1~3 business day
本标准规定了用直排四探针测量硅、锗单晶电阻率的方法。本标准适用于测量试样厚度和从试样边缘与任一探针端点的最近距离二者均大于探针间距的4倍的硅、锗单晶的体电阻率以及测量直径大于探针间距的10倍、厚度小于探针间距4倍的硅、锗单晶圆片(简称圆片)的电阻率。
Code of China
Standard
GB/T 1552-1995  Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array (English Version)
Standard No.GB/T 1552-1995
Statussuperseded
LanguageEnglish
File FormatPDF
Word Count8000 words
Price(USD)240.0
Implemented on1995-1-2
Deliveryvia email in 1~3 business day
Detail of GB/T 1552-1995
Standard No.
GB/T 1552-1995
English Name
Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
Chinese Name
硅、锗单晶电阻率测定直排四探针法
Chinese Classification
H21
Professional Classification
GB
ICS Classification
Issued by
STSB
Issued on
1995-04-18
Implemented on
1995-1-2
Status
superseded
Superseded by
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
Superseded on
2010-6-1
Abolished on
Superseding
GB 1552-1979 Measurement of resistivity for monocrystalline silicon with D-C four point probe
GB 5251-1985 Germanium monocrystal--Examination of resistivity--DC linear four-point probe
GB 6615-1986 Standard method for resistivity of silicon slices with collinear four-probe array measuring
Language
English
File Format
PDF
Word Count
8000 words
Price(USD)
240.0
Keywords
GB/T 1552-1995, GB 1552-1995, GBT 1552-1995, GB/T1552-1995, GB/T 1552, GB/T1552, GB1552-1995, GB 1552, GB1552, GBT1552-1995, GBT 1552, GBT1552
Introduction of GB/T 1552-1995
本标准规定了用直排四探针测量硅、锗单晶电阻率的方法。本标准适用于测量试样厚度和从试样边缘与任一探针端点的最近距离二者均大于探针间距的4倍的硅、锗单晶的体电阻率以及测量直径大于探针间距的10倍、厚度小于探针间距4倍的硅、锗单晶圆片(简称圆片)的电阻率。
Contents of GB/T 1552-1995
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Keywords:
GB/T 1552-1995, GB 1552-1995, GBT 1552-1995, GB/T1552-1995, GB/T 1552, GB/T1552, GB1552-1995, GB 1552, GB1552, GBT1552-1995, GBT 1552, GBT1552