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Position: Chinese Standard in English/GB/T 19444-2004
GB/T 19444-2004   Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction (English Version)
Standard No.: GB/T 19444-2004 Status:to be superseded remind me the status change

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Target Language:English File Format:PDF
Word Count: 3000 words Translation Price(USD):85.0 remind me the price change

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Implemented on:2004-7-1 Delivery: via email in 1~3 business day

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,2026-1-1,2004-7-1,141138181801622D6CC66A08C8104
Standard No.: GB/T 19444-2004
English Name: Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
Chinese Name: 硅片氧沉淀特性的测定-间隙氧含量减少法
Chinese Classification: H26    Metal nondestructive testing method
Professional Classification: GB    National Standard
ICS Classification: 29.040.01 29.040.01    Insulating fluids in general 29.040.01
Source Content Issued by: AQSIQ;SAC
Issued on: 2004-2-5
Implemented on: 2004-7-1
Status: to be superseded
Superseded by:GB/T 19444-2025 Test method for oxygen precipition characteristics of silicon wafers—Interstitial oxygen reduction
Superseded on:2026-1-1
Target Language: English
File Format: PDF
Word Count: 3000 words
Translation Price(USD): 85.0
Delivery: via email in 1~3 business day
本标准规定了由测量硅片间隙氧含量的减少量来检验硅片氧沉淀特性的方法原理、取样规则、热处理程序、试验步骤、数据计算等内容。本标准用于定性比较两批或多批集成电路用硅片间隙氧沉淀特性。
Code of China
Standard
GB/T 19444-2004  Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction (English Version)
Standard No.GB/T 19444-2004
Statusto be superseded
LanguageEnglish
File FormatPDF
Word Count3000 words
Price(USD)85.0
Implemented on2004-7-1
Deliveryvia email in 1~3 business day
Detail of GB/T 19444-2004
Standard No.
GB/T 19444-2004
English Name
Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
Chinese Name
硅片氧沉淀特性的测定-间隙氧含量减少法
Chinese Classification
H26
Professional Classification
GB
ICS Classification
Issued by
AQSIQ;SAC
Issued on
2004-2-5
Implemented on
2004-7-1
Status
to be superseded
Superseded by
GB/T 19444-2025 Test method for oxygen precipition characteristics of silicon wafers—Interstitial oxygen reduction
Superseded on
2026-1-1
Abolished on
Superseding
Language
English
File Format
PDF
Word Count
3000 words
Price(USD)
85.0
Keywords
GB/T 19444-2004, GB 19444-2004, GBT 19444-2004, GB/T19444-2004, GB/T 19444, GB/T19444, GB19444-2004, GB 19444, GB19444, GBT19444-2004, GBT 19444, GBT19444
Introduction of GB/T 19444-2004
本标准规定了由测量硅片间隙氧含量的减少量来检验硅片氧沉淀特性的方法原理、取样规则、热处理程序、试验步骤、数据计算等内容。本标准用于定性比较两批或多批集成电路用硅片间隙氧沉淀特性。
Contents of GB/T 19444-2004
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Keywords:
GB/T 19444-2004, GB 19444-2004, GBT 19444-2004, GB/T19444-2004, GB/T 19444, GB/T19444, GB19444-2004, GB 19444, GB19444, GBT19444-2004, GBT 19444, GBT19444