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Position: Chinese Standard in English/GB/T 19444-2025
GB/T 19444-2025   Test method for oxygen precipition characteristics of silicon wafers—Interstitial oxygen reduction (English Version)
Standard No.: GB/T 19444-2025 Status:to be valid remind me the status change

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Target Language:English File Format:PDF
Word Count: 7000 words Translation Price(USD):210.0 remind me the price change

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Implemented on:2026-1-1 Delivery: via email in 1~3 business day

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Standard No.: GB/T 19444-2025
English Name: Test method for oxygen precipition characteristics of silicon wafers—Interstitial oxygen reduction
Chinese Name: 硅片氧沉淀特性的测试 间隙氧含量减少法
Chinese Classification: H21    Metal physical property test method
Professional Classification: GB    National Standard
Source Content Issued by: SAMR; SAC
Issued on: 2025-06-30
Implemented on: 2026-1-1
Status: to be valid
Superseding:GB/T 19444-2004 Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
Target Language: English
File Format: PDF
Word Count: 7000 words
Translation Price(USD): 210.0
Delivery: via email in 1~3 business day
本文件描述了通过硅片热处理前后间隙氧含量的减少量来测试硅片氧沉淀特性的方法。
本文件适用于室温电阻率大于0.1 Ω·cm的n型硅单晶片和室温电阻率大于0.5 Ω·cm的p型硅单晶片氧沉淀特性的测试。
Code of China
Standard
GB/T 19444-2025  Test method for oxygen precipition characteristics of silicon wafers—Interstitial oxygen reduction (English Version)
Standard No.GB/T 19444-2025
Statusto be valid
LanguageEnglish
File FormatPDF
Word Count7000 words
Price(USD)210.0
Implemented on2026-1-1
Deliveryvia email in 1~3 business day
Detail of GB/T 19444-2025
Standard No.
GB/T 19444-2025
English Name
Test method for oxygen precipition characteristics of silicon wafers—Interstitial oxygen reduction
Chinese Name
硅片氧沉淀特性的测试 间隙氧含量减少法
Chinese Classification
H21
Professional Classification
GB
ICS Classification
Issued by
SAMR; SAC
Issued on
2025-06-30
Implemented on
2026-1-1
Status
to be valid
Superseded by
Superseded on
Abolished on
Superseding
GB/T 19444-2004 Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
Language
English
File Format
PDF
Word Count
7000 words
Price(USD)
210.0
Keywords
GB/T 19444-2025, GB 19444-2025, GBT 19444-2025, GB/T19444-2025, GB/T 19444, GB/T19444, GB19444-2025, GB 19444, GB19444, GBT19444-2025, GBT 19444, GBT19444
Introduction of GB/T 19444-2025
本文件描述了通过硅片热处理前后间隙氧含量的减少量来测试硅片氧沉淀特性的方法。
本文件适用于室温电阻率大于0.1 Ω·cm的n型硅单晶片和室温电阻率大于0.5 Ω·cm的p型硅单晶片氧沉淀特性的测试。
Contents of GB/T 19444-2025
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Keywords:
GB/T 19444-2025, GB 19444-2025, GBT 19444-2025, GB/T19444-2025, GB/T 19444, GB/T19444, GB19444-2025, GB 19444, GB19444, GBT19444-2025, GBT 19444, GBT19444