Standard No.:	GB/T 26068-2010
English Name:	Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance
Chinese Name:	硅片载流子复合寿命的无接触微波反射光电导衰减测试方法
Chinese Classification:	H80    Semimetal and semiconductor material in general
Professional Classification:	GB    National Standard
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Source Content Issued by:	AQSIQ
Issued on:	2011-1-10
Implemented on:	2011-10-1
Status:	superseded
Superseded by:	GB/T 26068-2018 Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method
Superseded on:	2019-11-1
Target Language:	English
File Format:	PDF
Word Count:	13000 words
Translation Price(USD):	390.0
Delivery:	via email in 1~3 business day

本方法适用于测量均匀掺杂、经过抛光处理的n型或p型硅片的载流子复合寿命。本方法是非破坏性、无接触测量。在电导率检测系统的灵敏度足够的条件下,本方法也可应用于测试切割或者经过研磨、腐蚀硅片的载流子复合寿命。