Standard No.:	GB/T 26068-2018
English Name:	Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method
Chinese Name:	硅片和硅锭载流子复合寿命的测试 非接触微波反射光电导衰减法
Chinese Classification:	H21    Metal physical property test method
Professional Classification:	GB    National Standard
Source Content Issued by:	SAMR; SAC
Issued on:	2018-12-28
Implemented on:	2019-11-1
Status:	valid
Superseding:	GB/T 26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance
Target Language:	English
File Format:	PDF
Word Count:	14500 words
Translation Price(USD):	435.0
Delivery:	via email in 1~5 business day

本标准规定了单晶和铸造多晶的硅片及硅锭的载流子复合寿命的非接触微波反射光电导衰减测试方法。
本标准适用于硅锭和经过抛光处理的N型或P型硅片（当硅片厚度大于1mm时，通常称为硅块）载流子复合寿命的测试。在电导率检测系统灵敏度足够的条件下，本标准也可用于测试切割或经过研磨、腐蚀的硅片的载流子复合寿命。通常，被测样品的室温电阻率下限在0.05Ω·cm～10Ω·cm之间，由检测系统灵敏度的极限确定。载流子复合寿命的测试范围为大于0.1.s，可测的最短寿命值取决于光源的关断特性及衰减信号测定器的采样频率，最长可测值取决于样品的几何条件及其表面的钝化程度。